Pinhole electrical conductivity in polycrystalline Si on locally etched SiNy/SiOx passivating contacts for Si solar cells

C.L. Anderson ^{a b}, H.L. Guthrey ^b, W. Nemeth ^b, C.-S. Jiang ^b, M.R. Page ^b, P. Stradins ^{a b}, S. Agarwal ^{a b}

^a
Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, CO, 80401, USA
^b
National Renewable Energy Laboratory, Golden, CO, 80401, USA

Materials Science in Semiconductor Processing, Volume 165, 2023, 107655,
ISSN 1369-8001,
https://doi.org/10.1016/j.mssp.2023.107655.

Boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts was studied for monocrystalline Si (c-Si) solar cell application. Samco open-load RIE system RIE-10NR was used for silicon etching.

Design concept of a hybrid photo-voltaic/thermal conversion cell for mid-infrared light energy harvester

Yoshiaki Nishijima¹, Ryosuke Komatsu¹, Takuya Yamamura¹, Armandas Balčytis^2,3, Gediminas Seniutinas^2,4, and Saulius Juodkazis^2,5,

¹ Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
² Nanotechnology Facility, Centre for Micro-Photonics, Swinburne University of Technology, John St., Hawthorn, Victoria 3122, Australia
³ Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu̧ av., LT-02300 Vilnius, Lithuania
⁴ Paul Scherrer Institute, Villigen CH-5232, Switzerland
⁵ Melbourne Centre for Nanofabrication, ANFF, 151 Wellington Road, Clayton VIC 3168, Australia
Optical Materials Express 7, 10, pp. 3484-3493 (2017)

Typical silicon-based solar cells have limitation on conversion efficiencies especially at IR wavelengths. Utilization of IR spectra and thermal parts is critical to increase the total efficiency of the solar cells. In this research, a hybrid photovoltaic/thermoelectric conversion system was proposed to maximize conversion efficiencies. Samco ICP-RIE System, RIE-101iPH was used to form black silicon (b-Si) on a silicon substrate.

Thin crystalline silicon with double-sided nano-hole array fabricated by soft UV-NIL and RIE

Min Wang^1,2, Yulian Zhang¹, Linfeng Lu¹, Dongdong Li¹ and Xufei Zhu^3
1 Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, People’s Republic of China
² University of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
³ School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China
Mater. Res. Express (2017) 4 055005

Crystalline silicon nano-hole array was fabricated using UV nanoimprint (UV-NIL) technology for potential silicon solar cell applications. Samco RIE ether, RIE-10NR was used in device fabrication for photoresist ashing and silicon plasma etching processes. Nano-hole array structures were successfully fabricated.

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RIE Plasma Etcher
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High-performance a-Si_1–xO_x:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si_1–xO_x:H stack buffer layer

He Zhang¹, Kazuyoshi Nakada², Shinsuke Miyajima² and Makoto Konagai^1,2
Phys. Status Solidi RRL (2015) 9: 225–229.
1 MEXT/FUTURE-PV Innovation Research, Japan Science and Technology (JST), Koriyama, Fukushima, Japan
2 Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan

Samco PECVD system was used for silicon thin film deposition in solar cell fabrication.