Micro-fabricated Si subwavelength grating for frequency-domain THz beam steering covering the 0.3–0.5 THz frequency band

Kohei Chiba, Taiyu Okatani, Naoki Inomata, and Yoshiaki Kanamori

Graduate School of Engineering, Department of Robotics, Tohoku University, 6-6-01 Aoba, Aramaki,
Aoba-ku, Sendai, Miyagi, Japan

Opt. Express 31, 27147-27160 (2023)

Samco PECVD system PD-100ST was used for SiO₂ film deposition using TEOS.

Magnesium Oxide (MgO) pHsensitive Sensing Membrane in Electrolyte-Insulator Semiconductor Structures with CF4 Plasma Treatment

Chyuan-Haur Kao^1,3,4, Chia Lung Chang¹, Wei Ming Su², Yu Tzu Chen², Chien Cheng Lu²,
Yu Shan Lee², Chen Hao Hong², Chan-Yu Lin⁴ & Hsiang Chen^2
1 Department of Electronic Engineering, Chang Gung University, Taoyuan, 333, Taiwan, ROC.
² Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, 545, Taiwan, ROC.
³ Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, College of Medicine, Taoyuan, Taiwan, ROC.
⁴ Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City,
Taiwan, ROC.
Scientific Reports (2017) 7 7185  DOI:10.1038/s41598-017-07699-3

In this paper, MgO (Magnesium Oxide) based biosensors were fabricated for chemical solution sensing with high pH sensitivity. CF₄ plasma treatment was carried out to shape nanostructures and stabilize the material properties of the MgO membrane. For the CF₄ plasma treatment of MgO films and deposition of silicon based films, Samco PECVD system PD-220N was used.

Samco offers PECVD systems for plasma deposition of SiO₂, SiN_x, a-Si, DLC and etc. These films are used for passivation, barrier film and other purposes in various research fields. For more details of our process capabilities of plasma deposition technologies, please visit the process data pages below.
SiO₂ PECVD Process Data
SiN_x PECVD Process Data

Run-to-Run Yield Evaluation of Improved Nb 9-layer
Advanced Process using Single Flux Quantum Shift Register
Chip with 68,990 Josephson Junctions

Shuichi Nagasawa and Mutsuo Hidaka
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1
Umezono, Tsukuba 305-8568, Japan
IOP Conf. Series: Journal of Physics: Conf. Series 871 (2017) 012065

Sputter SiO₂ deposition process has a challenge in reproducibility in device fabrication.
In this paper, as an alternative of the sputter deposition method, PECVD deposition method was developed in combination with Ar ion milling. Samco PECVD system, PD-270STL at AIST was used for SiO₂ insulation layer deposition. With effective chamber conditioning, SiO₂ insulation with less particles was achieved with an excellent run-to-run reproducibility.

This research was presented at 29th International Symposium on Superconductivity.

For more details of our SiO₂ PECVD process capabilities,
please visit the process data page below.
SiO₂ PECVD Data

Effects of epitaxial growth on the optimum condition of intrinsic amorphous silicon oxide buffer layers for silicon heterojunction solar cells

He Zhang^a, Kazuyoshi Nakada^b, Makoto Konagai^{a, c
a} MEXT/FUTURE-PV Innovation Research, Japan Science and Technology Agency (JST), 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0298, Japan
^b Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-NE-15 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
^c Advanced Research Laboratories, Tokyo City University, 8-15-1, Todoroki, Setagaya-ku, Tokyo 158-0082, Japan

Thin Solid Films (2017) 628 pp 214–220

Samco PECVD tool PD-2203L was used for deposition of amorphous silicon oxide buffer layer for silicon solar cell application. Excellent film properties of surface passivation were achieved. For more details of our PECVD lineup and capabilities, please visit the product pages below.

Anode PECVD Systems for High Quality Film Deposition of SiO₂, SiN_x and aSi
Cathode PECVD Systems for High-speed SiO₂ and SiN_x Deposition

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126

Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO₂ film deposition as a dielectric layer.

Samco offers high-speed SiO₂ and SiN_x film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
For more details of the plasma deposition process capabilities, please visit the process solution page below.
High-speed SiO₂ and SiN_x Deposition
Low-temperature SiO₂ and SiN_x PECVD Process

Fabrication of SiN_x Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

Qiang Li¹, Jie Liu¹, Yichuan Dai¹, Wushu Xiang¹, Man Zhang¹, Hai Wang² and Li Wen^1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
² School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China

Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiN_x) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiN_x film in device fabrication. Samco plasma CVD system was used for SiN_x film deposition. With optimization of deposition process recipe, compressive stress of SiN_x film was mitigated to suppress crack formation.

For more details of our SiN_x film deposition capabilities, please visit the process data page below.
SiN_x PECVD Process

Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

M. Cihan Çakır^1,2 ,Deniz Çalışkan¹, Bayram Bütün¹ and Ekmel Özbay^1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
² Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
³ Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey

Samco PECVD system at Bilkent University was used for Si₃N₄ film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si₃N₄ against Si etch mask for ITO gas sensor fabrication.

For more information on our Si₃N₄ PECVD process capabilities, please visit the process data page below.
Si₃N₄ PECVD Process Data

For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO₂, Si₃N₄, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO₂ and Si₃N₄ Film Deposition
ICP-RIE Plasma Etcher for Si, SiO₂, III-V & Metal Etching

Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield

MICHAEL K. CONNORS^1,3, JAMAL E. MILLSAPP² and GEORGE W. TURNER^1
1 Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02
420, USA.
² Toho Technology Inc., Chicago, IL 60625, USA.
Journal of Electronic Materials (2016) pp 1-7

A 300-nm thick SiO₂ film was deposited using Samco Cathode PECVD system, PD-200STP to insulate the exposed ridge sidewalls.

For more details on Samco’s low-temperature PECVD technologies and process capabilities, please visit our featured process solution page below.
Low-temperature PECVD for SiO₂ & SiN_x Deposition

Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.

SiO2 film was deposited on Si substrate, using Samco PECVD system.
Then, Si was etched over SiO2 film, using Samco ICP etcher for microscale patterning.

For more details of our SiO₂ PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO₂ PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Qingpeng Wang^1,2, Ying Jiang^1,2, Jiaqi Zhang^1,2, Kazuya Kawaharada¹, Liuan Li¹, Dejun Wang² and Jin-Ping Ao^1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
² School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003

Samco PECVD system was used for gate oxide (SiO₂) formation in GaN MOSFET fabrication.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/

Also, SiO₂ PECVD process data can be found in the page below.
SiO₂ PECVD Process