Pinhole electrical conductivity in polycrystalline Si on locally etched SiNy/SiOx passivating contacts for Si solar cells

C.L. Anderson ^{a b}, H.L. Guthrey ^b, W. Nemeth ^b, C.-S. Jiang ^b, M.R. Page ^b, P. Stradins ^{a b}, S. Agarwal ^{a b}

^a
Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, CO, 80401, USA
^b
National Renewable Energy Laboratory, Golden, CO, 80401, USA

Materials Science in Semiconductor Processing, Volume 165, 2023, 107655,
ISSN 1369-8001,
https://doi.org/10.1016/j.mssp.2023.107655.

Boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts was studied for monocrystalline Si (c-Si) solar cell application. Samco open-load RIE system RIE-10NR was used for silicon etching.

A Platform for CMOS Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with an MgO Interlayer

Kai Ding ¹, Dhruv Fomra ¹, Alexander V. Kvit ², Hadis Morkoç ¹, Nathaniel Kinsey ¹, Ümit Özgür ¹ and Vitaliy Avrutin ^1
1 Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, 23284 USA
² Materials Science Center, University of Wisconsin‐Madison, Madison, WI, 53706 USA
Advanced Photonics Research, 2000210 (2021)

A CMOS compatible hybrid-plasmonic-photonic waveguide was fabricated using TiN layer deposited by PEALD on Si (001) substrate with MgO interlayer. Samco ICP-RIE system RIE-101iPH was used for TiN/Au etching in chlorine chemistry and also Si etching in fluorine chemistry.

For more details of our ICP-RIE etch systems, please visit the product page below.
ICP-RIE Etch Systems

Celluloid Microenclosure and Microlens Array Fabricated by Suzukiʼs Universal Microprinting Method and XeF₂ Vapor Etching for Microbial Analysis

Akihiro Matsutani¹ and Ayako Takada^2
1 Semiconductor and MEMS Processing Division, Technical Department, Tokyo Institute of Technology,
4259 Nagatsuta, Yokohama, Kanagawa 226-8503, Japan
² Biomaterials Analysis Division, Technical Department, Tokyo Institute of Technology,
4259 Nagatsuta, Yokohama, Kanagawa 226-8501, Japan
Sensors and Materials, Vol. 30, No. 1 (2018) 149–155

A celluloid-based biochip for cell trapping is fabricated using Suzuki’s universal microprinting (SUMP) method. Samco tabletop Reactive Ion Etching (RIE) system was used for mold fabrication. Si layer was etched over photoresist and Cr mask in fluorine chemistry.

For more information on our RIE system lineup, please visit the product page below.
RIE Systems

Direct fabrication of diffraction grating onto organic single crystals by electron beam lithography

Yoshihiro Kawata, Kazuki Aoki, Yuhi Inada*, Takeshi Yamao, and Shu Hotta
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto 606-8585, Japan
Japanese Journal of Applied Physics 57, 03EH11 (2018)

In this paper, direct fabrication of gratings was performed on HMDS-treated SiO₂/Si substrates. Samco plasma etching system at Kyoto Institute of Technology was used for plasma etching of SiO₂/Si substrates for grating fabrication over an organic semiconducting oligomer 5,5AA-bis(4-biphenylyl)-2,2A:5A,2AA-terthiophene (BP3T). The system was also used for estimate of BP3T etch resistivity.

Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application

Mohammed Ashraf, Sree V. Sundararajan, Gianluca Grenci
National University of Singapore, Mechanobiology Institute, Singapore
J. Micro/Nanolith. MEMS MOEMS. 16(3), 034501 (Jul 10, 2017).
doi:10.1117/1.JMM.16.3.034501

Silicon plasma etching was carried out using RIE etcher RIE-10NR. Low-power etching process was newly developed in fluorine chemistry to fabricate vertical smooth sidewalls.

National University of Singapore is one of Samco’s proud customers. As seen in this paper, Samco RIE etcher RIE-10NR shows process versatility with excellent profile control for university lab users. The system can offer a wide range of process window for etching of various materials (silicon, SiO₂, SiN_x, metals and polymer).

For more details of our process capabilities of silicon etching, please visit the process data page below.
Silicon Plasma Etching

Thin crystalline silicon with double-sided nano-hole array fabricated by soft UV-NIL and RIE

Min Wang^1,2, Yulian Zhang¹, Linfeng Lu¹, Dongdong Li¹ and Xufei Zhu^3
1 Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, People’s Republic of China
² University of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
³ School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China
Mater. Res. Express (2017) 4 055005

Crystalline silicon nano-hole array was fabricated using UV nanoimprint (UV-NIL) technology for potential silicon solar cell applications. Samco RIE ether, RIE-10NR was used in device fabrication for photoresist ashing and silicon plasma etching processes. Nano-hole array structures were successfully fabricated.

For more details of Samco RIE etcher lineup, please visit the product page below.
RIE Plasma Etcher
We provide several systems to meet each customer’s process requirements in plasma etching processes.

Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation

HIROMU SATO¹, HIROKI MIURA¹ FENG QIU² ANDREW M. SPRING², TSUBASA KASHINO³, TAKAMASA KIKUCHI³, MASAAKI OZAWA³, HIDEYUKI NAWATA³, KEISUKE ODOI³, SHIYOSHI YOKOYAMA^1,2
1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)

An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO₂ substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.

For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data

Anti-reflective surfaces: Cascading nano/microstructuring

Yoshiaki Nishijima¹ Ryosuke Komatsu¹ Shunsuke Ota¹, Gediminas Seniutinas² Armandas Balčytis^2,3 and Saulius Juodkazis^2
1 Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501, Japan
² Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
³ Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu¸ Avenue, LT-02300 Vilnius, Lithuania
APL PHOTONICS 1, 076104 (2016)

Anti-reflective surfaces were created employing plasma etching technologies. Samco ICP-RIE etcher was used for black silicon plasma etching (b-Si) to fabricate nanospike structures using fluorine chemistry.

For more process capabilities of our silicon plasma etching including the Bosch Process Etching, please visit the process data pages below.

Silicon Plasma Etching (RIE etch or ICP-RIE)
Deep Silicon Trench/Via Hole Etching using the Bosch Process

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

M. Nuzaihan M. N ¹, U. Hashim^1,2, M. K. Md Arshad^1,2, A. Rahim Ruslinda¹, S.F.A. Rahman³, M. F. M. Fathil¹, Mohd. H. Ismail^2
1 Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis, Malaysia,
² School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), 02600 Pauh, Perlis, Malaysia,
³ Chemistry Department, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Malaysia
PLoS ONE 11(3): e0152318. doi:10.1371/journal.pone.0152318

Samco ICP etch system at Universiti Malaysia Perlis was used for anisotropic etching of silicon for silicon nanowires fabrication.
For our process examples of silicon dry etching, please visit the process data page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

Microfluidic chips for forward blood typing performed with a multichannel waveguide-mode sensor

Hiroki Ashiba^a, Makoto Fujimaki^a, Koichi Awazuv, Torahiko Tanaka^b and Makoto Makishima^b
a Electronics and Photonic Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
^b Division of Biochemistry, Department of Biomedical Sciences, Nihon University School of Medicine, 30-1 Oyaguchi-kamicho, Itabashi, Tokyo 173-8610, Japan
Sensing and Bio-Sensing Research 2016 Volume 7, March 2016, Pages 121-126

Samco ICP etcher was used to fabricate a mold template of microfluidic chips by silicon plasma etching.

For our process capabilities of silicon plasma etching, please visit the process data page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)