Category: Si DRIE
Scientific Paper on Microfluidic Device Fabrication from National Taiwan University
Enhancement of microfluidic particle separation using cross-flow filters with hydrodynamic focusing
Yun-Yen Chiu, Chen-Kang Huang, and Yen-Wen Lu
Department of Bio-Industrial Mechatronics Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China
Biomicrofluidics (2016) 10, 011906
Samco silicon DRIE system at National Taiwan University was used for microchannel fabrication with crossflow filtration mechanism.
For more details of our deep silicon etching capabilities, please visit the process data pages below.
Deep Silicon Trench/Via Hole Etching using Bosch Process
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Scientific Paper on Silicon 3D Nanotructure Fabrication Using SAMCO DRIE System from Osaka University and Nara Institute of Science and Technology Group
Creation of atomically flat Si{111}7 × 7 side-surfaces on a three-dimensionally-architected Si(110) substrate
Azusa N. Hattoria, Ken Hattorib, Shohei Takemotob, Hiroshi Daimonb and Hidekazu Tanakaa
a Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
b Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
Surface Science (2016) 644, 86–90
Samco silicon DRIE System was used for deep silicon etching to fabricate three-dimensional (3D) nanostructures.
For more details of our deep silicon etching capabilities, please visit the process data pages below.
Deep Silicon Trench/Via Hole Etching using Bosch Process
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Scientific Paper on Microfluidics Fabrication from Princeton University Using SAMCO DRIE System
Microfluidic chemical processing with on-chip washing by deterministic lateral displacement arrays with separator walls
Yu Chen1,2, Joseph D’Silva1,2, Robert H. Austin1,3 and James C. Sturm1,2
1 Princeton Institute for Science and Technology of Materials (PRISM), Princeton, New Jersey 08544, USA
2 Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
3 Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
BIOMICROFLUIDICS 9, 054105 (2015)
Samco Silicon DRIE System at Princeton University was used for microchannel fabrication.
For our process capabilities of deep silicon etching, please visit the pages below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole Etching using Bosch Process
Scientific Paper on Capacitive Accelerometer Fabrication Using Si DRIE Process by Kyoto University
A sub-micron-gap soi capacitive accelerometer array utilizing size effect
Matsui, Y., Hirai, Y., Tsuchiya, T. and Tabata, O.
Dept. of Micro Eng., Kyoto Univ., Kyoto, Japan
Presented at 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) at Anchorage, AK.
Samco Silicon DRIE System at Kyoto University was used for deep silicon etching in MEMS device fabrication.
Our process examples and capabilities of deep silicon etching can be found in the page below.
Deep Silicon Trench/Via Hole Etching using Bosch Process
Kyoto University is one of the proprietary customers of Samco silicon DRIE System for MEMS device fabrication.
Scientific Paper on MEMS Probe Fabrication Using the Bosch Process Etching by Princeton University
Fabrication and Characterization of a Novel Nanoscale Thermal Anemometry Probe
Margit Vallikivi and Alexander J. Smits
Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 USA
Journal of Microelectromechanical Systems (2014) 23 , 4
Samco Silicon DRIE System at Princeton University was used for slope formation from a silicon substrate to fabricate a MEMS-based nanoscale thermal anemometry probe.
For more details of our deep silicon etching capabilities using the Bosch Process, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Etching Process Data Using the Bosch Process
Scientific Paper Using SAMCO DRIE System at Princeton University
Metal-Containing Block Copolymer Thin Films Yield Wire Grid Polarizers with High Aspect Ratio
So Youn Kim 1, Jessica Gwyther 2, Ian Manners 2, Paul M. Chaikin 3, and Richard A. Register 1
1 Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, USA
2 School of Chemistry, University of Bristol, Bristol, United Kingdom
3 Department of Physics, New York University, New York, USA
Adv. Mater., 26, 791-795 (2014)
Samco Silicon DRIE System at Princeton University was used for deep silicon etching using the Bosch Process.
For more details of our deep silicon etching capabilities, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Silicon Deep Etching Using the Bosch Process