Progress in x-ray critical-angle transmission grating technology development

Ralf K. Heilmann,¹ Alexander R. Bruccoleri,² Jungki Song,¹ Mark L. Schattenburg^1
1MIT Kavli Institute for Astrophysics and Space Research (United States)
²Izentis LLC (United States)
Proc. SPIE 11119, Optics for EUV, X-Ray, and Gamma-Ray Astronomy IX, 1111913 (9 September 2019); https://doi.org/10.1117/12.2529354

Samco Si DRIE Equipment was used for 200 nm-period grating Si deep etching (6 µm).

Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination

Hironori Okumura¹ and Taketoshi Tanaka^2
1 Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8573, Japan
² Rohm Co. Ltd., Kyoto 615-8585, Japan
Japanese Journal of Applied Physics, 58, 120902 (2019)

Ga2O3 is a compound semiconductor material with a large band-gap energy. Research on this material is still early stage, but more researchers are getting interested in unique material properties.  Dry etching and wet etching of β-Ga2O3 was studied in this paper. Samco ICP-RIE system RIE-400iP was used for mesa structure fabrication in ICP etching of chlorine chemistry.

Profile control of compound semiconductor materials is one of our strong points in material processing. We have accumulated process knowledge on GaN, GaAs, InP, Ga2O3, etc.
If you would like to see some process data, please visit the following webpage.
Process Data by Materials