Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation

HIROMU SATO¹, HIROKI MIURA¹ FENG QIU² ANDREW M. SPRING², TSUBASA KASHINO³, TAKAMASA KIKUCHI³, MASAAKI OZAWA³, HIDEYUKI NAWATA³, KEISUKE ODOI³, SHIYOSHI YOKOYAMA^1,2
1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)

An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO₂ substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.

For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

Shen-Che Huang¹, Heng Li¹ Zhe-Han Zhang¹ Hsiang Chen² Shing-Chung Wang¹ and Tien-Chang Lu^1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan
² Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan
Appl. Phys. Lett. 110, 021108 (2017); doi: 10.1063/1.4973966

Micro-LED devices with oxide-refilled current apertures of different sizes were fabricated on sapphire substrates. Samco ICP-RIE etcher was used for aperture pattern transfer by GaN plasma etching with etching depth control.

Samco has dedicated to academic and industry customers for both research and production of LED devices by providing equipment and process technologies of plasma etching and PECVD. For more details on our process solutions for LED manufacturing, please visit the process solutions page below.
Patterned Sapphire Substrate & GaN Etch for HB LEDs

Also, our latest technical report be found here.
GaN Etching for MiniLED and MicroLED Applications