Difference in growth and coalescing patterns of droplets on bi-philic surfaces with varying spatial distribution

Martand Mayukh Garimella, Sudheer Koppu, Shantanu Shrikant Kadlaskar, Venkata Pillutla, Abhijeet, Wonjae Choi
Department of Mechanical Engineering, University of Texas at Dallas, 800 W. Campbell Road, Richardson, TX 75080

Journal of Colloid and Interface Science (2017)

In this paper, surface wettability patterning was performed, and unique water droplet motion on the patterned regions was investigated. Samco UV-ozone cleaner, UV-1 at UT Dallas was used for complete native oxide removal after hydrofluoric acid treatment.

Surface wettability modulation (hydrophilic and hydrophobic) is fundamental for material research and device fabrication. Samco is developing surface treatment processes using UV-ozone technologies and plasma technologies. If you are interested in our latest material processing technologies and publication, please visit the page below.
Material Processing Data

Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

N. Okada¹, K. Nojima¹, N. Ishibashi¹, K. Nagatoshi¹, N. Itagaki¹, R. Inomoto¹, S. Motoyama², T. Kobayashi², and K. Tadatomo^1
1Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
²R&D Department, SAMCO Inc., 36 Takeda Waraya-cho, Fushimi-ku, Kyoto 612-8443, Japan

Gallium Nitride (GaN) is a popular nitride material due to its unique material properties such as wide bandgap and high breakdown voltage. The material is commercially used for various applications such as LEDs , RF devices, HEMTs and LDs. In this paper, optimized conditions of GaN plasma etching was investigated in chlorine chemistry. GaN etch profile, etch rate and etch selectivity over SiN hard mask were investigated in several process conditions using Samco ICP-RIE System, RIE-230iPC. For deposition of SiN hard mask layers, Samco PECVD Tool, PD-220NL was used.

This research paper is collaboration between Yamaguchi University and Samco. We have cooperated with Yamaguchi University for process development of GaN etching and PECVD technologies to achieve technical breakthrough in nitride semiconductor based device research.

For more details of our GaN plasma etching technologies and capabilities, please visit the GaN etching process data page below.
GaN Etching using ICP-RIE

Deposition of TiO₂/Al₂O₃ bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

J. W. Liu¹, M. Y. Liao¹, M. Imura¹, R. G. Banal¹, and Y. Koide^2
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
² Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
JOURNAL OF APPLIED PHYSICS 121, 224502 (2017)

Diamond-based power devices are expected to see emerging applications which require high breakdown voltage. In this paper, MOSFET, MOS capactors and MOS logic inverter were fabricated using hydro-generated diamond.
Plasma etching of H-diamond channel layer was performed using Samco RIE etcher, RIE-200NL. Samco offers several plasma etching systems for customers who actively working on diamond power device research. For more details of plasma etching systems for diamond etching, please visit the product pages below.

RIE Plasma Etcher
ICP Etcher

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y₂O₃ oxide insulator grown by electron beam evaporator

J. W. Liu¹ H. Oosato² M. Y. Liao¹ and Y. Koide^3
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
² Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
³ Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
APPLIED PHYSICS LETTERS 110, 203502 (2017)

Hydrogenated diamond-based MOSFET is a promising next-generation power device as well as SiC- or GaN-based devices. The device research on this material is still under development.
In this paper, H-diamond MOSFET with an Y₂O₃ oxide insulator was fabricated. Samco RIE etcher, RIE-200NL was used for mesa etching of H-diamond layer.

Samco RIE etchers offer diamond plasma etching process solutions for emerging power device research communities. For more details on our equipment lineup and specifications, please visit the product page below.
RIE Etcher for R&D and Production

If you are interested in diamond etching processes, please visit the process data page below.
Diamond Plasma Etching

Thin crystalline silicon with double-sided nano-hole array fabricated by soft UV-NIL and RIE

Min Wang^1,2, Yulian Zhang¹, Linfeng Lu¹, Dongdong Li¹ and Xufei Zhu^3
1 Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, People’s Republic of China
² University of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
³ School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China
Mater. Res. Express (2017) 4 055005

Crystalline silicon nano-hole array was fabricated using UV nanoimprint (UV-NIL) technology for potential silicon solar cell applications. Samco RIE ether, RIE-10NR was used in device fabrication for photoresist ashing and silicon plasma etching processes. Nano-hole array structures were successfully fabricated.

For more details of Samco RIE etcher lineup, please visit the product page below.
RIE Plasma Etcher
We provide several systems to meet each customer’s process requirements in plasma etching processes.

Bacterial population solitary waves can defeat rings of funnels

Ryan J Morris¹, Trung V Phan², Matthew Black³, Ke-Chih Lin⁴, Ioannis G Kevrekidis⁵, Julia A Bos³ and Robert H Austin^2
1 School of Physics & Astronomy, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
² Department of Physics, Princeton University, Jadwin Hall, Princeton, NJ 08544, United States of America
³ Lewis-Sigler Institute for Integrative Genomics, Princeton, NJ 08544 United States of America
⁴ Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America
⁵ Department of Chemical and Biological Engineering and PACM, Princeton University, Princeton, NJ 08544, United States of America
New Journal of Physics (2017) Volume 19 035002

Circular corral for bacteria made of rings of concentric funnels was fabricated. Nanoslits were etched on a silicon wafer using Samco Deep RIE Tool RIE-800iPB at Princeton University.

Samco offers a couple of silicon Deep RIE systems for R&D and production. Please see the product page below.
Silicon Deep RIE Systems

Also, for more details of Samco silicon deep RIE process capabilities, please visit the process solution page below.
Slicon Deep RIE Technology for MEMS and TSV Processing

Effects of epitaxial growth on the optimum condition of intrinsic amorphous silicon oxide buffer layers for silicon heterojunction solar cells

He Zhang^a, Kazuyoshi Nakada^b, Makoto Konagai^{a, c
a} MEXT/FUTURE-PV Innovation Research, Japan Science and Technology Agency (JST), 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0298, Japan
^b Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-NE-15 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
^c Advanced Research Laboratories, Tokyo City University, 8-15-1, Todoroki, Setagaya-ku, Tokyo 158-0082, Japan

Thin Solid Films (2017) 628 pp 214–220

Samco PECVD tool PD-2203L was used for deposition of amorphous silicon oxide buffer layer for silicon solar cell application. Excellent film properties of surface passivation were achieved. For more details of our PECVD lineup and capabilities, please visit the product pages below.

Anode PECVD Systems for High Quality Film Deposition of SiO₂, SiN_x and aSi
Cathode PECVD Systems for High-speed SiO₂ and SiN_x Deposition

A novel PMMA/NEB bilayer process for sub-20 nm gold nanoslits by a selective electron beam lithography and dry etch

Xiaqi Huang^a, Jinhai Shao^a, ChialinTsou^a, Sichao Zhang^a, Bingrui Lu^a, Ling Hao^b, Yan Sun^c, and Yifang Chen^a
a Nanolithogrophy and Application Research Group, State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
^b National Physical Laboratory, Teddington TW11 0LW, UK
^c National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Microelectronic Engineering (2017) 172, Pages 13-18

Gold nanoslit structures were fabricated using process parameter optimization of electron beam lithography and dry etching. Samco plasma etcher RIE-10NR was used for dry etching of PMMA layer in oxygen plasma treatment.

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126

Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO₂ film deposition as a dielectric layer.

Samco offers high-speed SiO₂ and SiN_x film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
For more details of the plasma deposition process capabilities, please visit the process solution page below.
High-speed SiO₂ and SiN_x Deposition
Low-temperature SiO₂ and SiN_x PECVD Process

Fabrication of 25 μm-filter microfluidic chip on silicon substrate

Nguyen Ngan Le^1,2, Kim Khanh Huynh¹, Thi Cam Hue Phan¹, Thi My Dung Dang¹ and Mau Chien Dang^1
1 Laboratory for Nanotechnology, Vietnam National University in Ho Chi Minh City, Community 6, Linh
Trung Ward, Thu Duc District, Ho Chi Minh, Vietnam
² University of Science, Vietnam National University in Ho Chi Minh City, 227 Nguyen Van Cu Street,
District 5, Ho Chi Minh City, Vietnam
Adv. Nat. Sci.: Nanosci. Nanotechnol. 8 (2017) 015003

A microfluidic chip device was fabricated using deep silicon etching technology of the Bosch Process. Samco Deep RIE Tool RIE-200iPB was used for silicon etching over silver hard mask. With optimization of process recipe in the silicon etching, vertical silicon channel profile was fabricated.

For more details of our deep RIE process capabilities, please visit the pages below.
Silicon DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole/Pillar Etching using the Bosch Process