Category: 2017 Customer
Scientific paper on 10-nm T-shaped gate fabrication by Fudan University
Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch
Jinhai Shao1, Jianan Deng1, W. Lu2 and Yifang Chen1
1Fudan University (China), 2Ohio State University (United States)
J. of Micro/Nanolithography, MEMS, and MOEMS, 16(3), 033508 (2017).
T-shaped gates with the footprint scaling down to 10 nm were fabricated using a double patterning procedure (electron beam lithography and dry etching). Samco Reactive Ion Etching Tool RIE-10NR was used for pattern transfer of metal nanoslit on SiNx layer in fluorine-based chemistry.
Scientific paper on PV/thermoelectric conversion system by Yokohama National University team
Design concept of a hybrid photo-voltaic/thermal conversion cell for mid-infrared light energy harvester
Yoshiaki Nishijima1, Ryosuke Komatsu1, Takuya Yamamura1, Armandas Balčytis2,3, Gediminas Seniutinas2,4, and Saulius Juodkazis2,5,
1 Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
2 Nanotechnology Facility, Centre for Micro-Photonics, Swinburne University of Technology, John St., Hawthorn, Victoria 3122, Australia
3 Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu̧ av., LT-02300 Vilnius, Lithuania
4 Paul Scherrer Institute, Villigen CH-5232, Switzerland
5 Melbourne Centre for Nanofabrication, ANFF, 151 Wellington Road, Clayton VIC 3168, Australia
Optical Materials Express 7, 10, pp. 3484-3493 (2017)
Typical silicon-based solar cells have limitation on conversion efficiencies especially at IR wavelengths. Utilization of IR spectra and thermal parts is critical to increase the total efficiency of the solar cells. In this research, a hybrid photovoltaic/thermoelectric conversion system was proposed to maximize conversion efficiencies. Samco ICP-RIE System, RIE-101iPH was used to form black silicon (b-Si) on a silicon substrate.
Scientific paper on transparent conductive oxide solar cell by Tokyo Institute of Technology
Optically-rough and physically-flat TCO substrates for superstrate-type thin-film solar cells: Sol-gel Zn1−xMgxO coating on reaction-ion etched glass substrates
Lei Meng and Shinsuke Miyajima
Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, 2-12-1-NE-17, Ookayama, Meguro-ku, Tokyo, Japan
Solar Energy Materials and Solar Cells 2017 172, pp 230-237
Optically-rough and physically-flat transparent conductive oxides (TCO) substrates were created on glass substrates to promote light absorption of solar cells. Al doped Zn1−xMgxO (AZMO) transparent conductive thin film was etched in CFx based plasma using Samco RIE etcher RIE-10NR. The effects of gas mixture composition on etch rate was investigated.
Samco offers multiple types of RIE etchers from tabletop to 450 mm for various applications (plasma etching, photoresist ashing and plasma treatment). For more information on Samco RIE etcher lineup, please visit the product page below.
RIE Etcher (from tabletop to 450 mm)
Scientific paper on low-temperature annealing of InGaZnO transistors by Nara Institute of Science and Technology
Low temperature (150°C) wet oxygen annealing of amorphous InGaZnO thin-film transistors for flexible device applications
M. P. Jallorina, J. P. Bermundo, Y. Ishikawa and Y. Uraoka
Nara Institute of Science and Technology, Graduate School of Materials Science, 8916-5 Takayama, Ikoma, Nara 630-0192 Japan
2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), Kyoto, Japan, 2017, pp. 203-204.
Low-temperature processing is required in flexible polymer device fabrication because temperature setting is limited by native melting temperature of polymer materials. In this research, several methods of ultraviolet (UV), ozone (O3) and wet oxygen (Wet O2) were compared to investigate the effects on the device performance. Samco UV-ozone cleaner UV-1 was used for UV, ozone or UV-ozone processes. The results show that UV & O3 annealing at 150°C has higher mobility. Samco UV-ozone cleaners are equipped with stage heating (up to 300degC) and ex-situ ozone generator to promote generation of reactive atomic oxygen in thermal ozone dissociation. For more details of our UV-ozone technologies, please visit the product page.
Samco UV-Ozone Cleaner (Tabletop & Production Models)
Scientific paper on printable elastic conductors by the University of Tokyo
Printable elastic conductors by in situ formation of silver nanoparticles from silver flakes
Naoji Matsuhisa1, Daishi Inoue2, Peter Zalar1,3, Hanbit Jin1, Yorishige Matsuba1,3, Akira Itoh1,3, Tomoyuki Yokota1,3, Daisuke Hashizume2 and Takao Someya1,2,3,4
1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
2Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
3Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST), 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113-0032, Japan.
4Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
Nature Materials 16, 834–840 (2017)
Someya lab at the University of Tokyo is famous for printable and stretchable electronics for healthcare and wearable device applications. In this research, silver nanoparticles were used as conductive materials in flexible sensor and actuator networks, expecting large-area manufacturing using printing technologies. In the fabrication of stretchable pressure and temperature sensor, Samco UV-ozone cleaner UV-1 was used for UV curing of photoresist PSR-301A. Samco offers multiple systems of surface treatment (plasma cleaning and UV-ozone cleaning) for device fabrication and material research.
Scientific paper on red blood cell analysis using plasma-treated COC plate by AIST
Hydrophilic-treated plastic plates for wide-range analysis of Giemsa-stained red blood cells and automated Plasmodium infection rate counting
Muneaki Hashimoto1, Shouki Yatsushiro1, Shohei Yamamura1, Masato Tanaka1, Hirokazu Sakamoto1,3, Yusuke Ido1, Kazuaki Kajimoto1, Mika Bando2, Jun‑ichi Kido2 and Masatoshi Kataoka1
1Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2217‑14, Hayashi‑cho, Takamatsu, Kagawa 761‑0301, Japan.
2Department of Periodontology and Endodontology, Institute of Health Biosciences, The University of Tokushima Graduate School, Institute of Health Biosciences, 3‑18‑15 Kuramoto, Tokushima 770‑8504, Japan.
Malar J (2017) 16 321
As a new method of malaria diagnostics, the count of Plasmodium spp. cells in red blood cells (RBCs) using hydrophilic-treated cyclic olefn copolymer (COC) plates was proposed. Oxygen plasma treatment was applied to COC plates in order to modify the surface wettability to hydrophilic using Samco RIE etcher RIE-10NR.
Polymer surface modification is an essential technique to achieve surface wettability improvement and direct substrate bonding in microfluidics fabrication. We offer plasma cleaners and UV-ozone cleaners as well as plasma etching equipment for this application. The paper below shows long-term stable hydrophilic surfaces of polymer materials (PMMA, COC, COP and PEEK) using UV-ozone treatment technologies.
UV/ozone Surface Modification for Long-term Stable Hydrophilic Surface of Polymer Microfluidic Devices
Scientific paper on PZT ultrasonic microsensors by Kyoto Institute of Technology
Sensitivity of Piezoelectric Ultrasonic Microsensors with Sol-Gel Derived PZT Films Prepared through Various Pyrolysis Temperatures
Kaoru Yamashita, Shota Nakajima, Jo Shiomi and Minoru Noda
Graduate School of Science and Technology, Kyoto Institute of Technology, Kyoto 606-8585, Japan
2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Japan, 2017, pp. 108-109.
In this paper, MEMS ultrasonic microsensors with sol-gel derived PZT piezoelectric diaphragm was fabricated. In device fabrication, Samco silicon Deep RIE etcher RIE-400iPB was used to form the thin diaphragm structure by silicon plasma etching from the wafer backside.
Stress control of PZT thin film was carried out to investigate high ultrasonic sensitivity of the devices.
Samco provides silicon deep RIE etching technologies utilizing the Bosch Process to R&D labs for MEMS device and TSV processing applications. For more information on our process technologies of deep silicon etching, please visit the process data page below.
Silicon Deep RIE Process Data
Scientific paper on MgO sensing membrane fabrication by Chang Gung University
Magnesium Oxide (MgO) pHsensitive Sensing Membrane in Electrolyte-Insulator Semiconductor Structures with CF4 Plasma Treatment
Chyuan-Haur Kao1,3,4, Chia Lung Chang1, Wei Ming Su2, Yu Tzu Chen2, Chien Cheng Lu2,
Yu Shan Lee2, Chen Hao Hong2, Chan-Yu Lin4 & Hsiang Chen2
1 Department of Electronic Engineering, Chang Gung University, Taoyuan, 333, Taiwan, ROC.
2 Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, 545, Taiwan, ROC.
3 Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, College of Medicine, Taoyuan, Taiwan, ROC.
4 Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City,
Taiwan, ROC.
Scientific Reports (2017) 7 7185 DOI:10.1038/s41598-017-07699-3
In this paper, MgO (Magnesium Oxide) based biosensors were fabricated for chemical solution sensing with high pH sensitivity. CF4 plasma treatment was carried out to shape nanostructures and stabilize the material properties of the MgO membrane. For the CF4 plasma treatment of MgO films and deposition of silicon based films, Samco PECVD system PD-220N was used.
Samco offers PECVD systems for plasma deposition of SiO2, SiNx, a-Si, DLC and etc. These films are used for passivation, barrier film and other purposes in various research fields. For more details of our process capabilities of plasma deposition technologies, please visit the process data pages below.
SiO2 PECVD Process Data
SiNx PECVD Process Data
Scientific paper on PECVD SiO2 insulation deposition by AIST
Run-to-Run Yield Evaluation of Improved Nb 9-layer
Advanced Process using Single Flux Quantum Shift Register
Chip with 68,990 Josephson Junctions
Shuichi Nagasawa and Mutsuo Hidaka
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1
Umezono, Tsukuba 305-8568, Japan
IOP Conf. Series: Journal of Physics: Conf. Series 871 (2017) 012065
Sputter SiO2 deposition process has a challenge in reproducibility in device fabrication.
In this paper, as an alternative of the sputter deposition method, PECVD deposition method was developed in combination with Ar ion milling. Samco PECVD system, PD-270STL at AIST was used for SiO2 insulation layer deposition. With effective chamber conditioning, SiO2 insulation with less particles was achieved with an excellent run-to-run reproducibility.
This research was presented at 29th International Symposium on Superconductivity.
For more details of our SiO2 PECVD process capabilities,
please visit the process data page below.
SiO2 PECVD Data
Scientific paper on silicon RIE etching by National University of Singapore
Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application
Mohammed Ashraf, Sree V. Sundararajan, Gianluca Grenci
National University of Singapore, Mechanobiology Institute, Singapore
J. Micro/Nanolith. MEMS MOEMS. 16(3), 034501 (Jul 10, 2017).
doi:10.1117/1.JMM.16.3.034501
Silicon plasma etching was carried out using RIE etcher RIE-10NR. Low-power etching process was newly developed in fluorine chemistry to fabricate vertical smooth sidewalls.
National University of Singapore is one of Samco’s proud customers. As seen in this paper, Samco RIE etcher RIE-10NR shows process versatility with excellent profile control for university lab users. The system can offer a wide range of process window for etching of various materials (silicon, SiO2, SiNx, metals and polymer).
For more details of our process capabilities of silicon etching, please visit the process data page below.
Silicon Plasma Etching