Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In₂O₃ surfaces

Theresa Berthold¹, Julius Rombach² Thomas Stauden¹ Vladimir Polyakov³
Volker Cimalla³ Stefan Krischok¹ Oliver Bierwagen² and Marcel Himmerlich^1
1 Institut fur Mikro- und Nanotechnologien MacroNano, Technische Universit€at Ilmenau, PF 100565, 98684 Ilmenau, Germany
² Paul-Drude-Institut fur Festk€orperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
³ Fraunhofer-Institut fur Angewandte Festk€orperphysik, Tullastraße 72, 79108 Freiburg, Germany
Journal of Applied Physics 120, 245301 (2016)

Indium Oxide (In₂O₃) is used for metal contacts of electronic devices. It is known that defects (oxygen vacancies) and impurities (adsorbates) of In₂O₃ films change electron concentration. In previous papers, surface treatment techniques using plasma technologies were investigated to reduce the defects and impurities of In₂O₃ films.

In this paper, Samco ICP plasma etching tool at Paul-Drude-Institut was used for plasma surface oxidation of In₂O₃, and the samples were treated by subsequent vacuum annealing. It was found that oxygen plasma treatment reduced adsorbed carbon impurities and removed surface defect states, attributed to oxygen vacancies.

Hierarchically nanostructured boron-doped diamond electrode surface

Takeshi Kondo^{a, b, c}, Keita Yajima^a, Tsuyoshi Kato^a, Masahiro Okano^d, Chiaki Terashima^{b, c}, Tatsuo Aikawa^a, Masanori Hayase^{b, d}, Makoto Yuasa^{a, b, c}

^a Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
^b Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
^c ACT-C/JST, 4-1-8 Honcho, Kawaguchi, Saitama 333-0012, Japan
^d Department of Mechanical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Diamond and Related Materials (2016)
A boron-doped diamond (BDD) electrode with a large specific surface area was fabricated. The combination of thermal treatment and whisker formation by diamond plasma etching was employed for nano-texturing of diamond surfaces. Samco open-load Reactive Ion Etcher, RIE-10NR was used for diamond plasma etching process.

For more details of our diamond plasma etching technologies and capabilities, please visit the process data page below.
Diamond Plasma Etching (RIE and ICP Etch)

Fabrication of SiN_x Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

Qiang Li¹, Jie Liu¹, Yichuan Dai¹, Wushu Xiang¹, Man Zhang¹, Hai Wang² and Li Wen^1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
² School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China

Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiN_x) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiN_x film in device fabrication. Samco plasma CVD system was used for SiN_x film deposition. With optimization of deposition process recipe, compressive stress of SiN_x film was mitigated to suppress crack formation.

For more details of our SiN_x film deposition capabilities, please visit the process data page below.
SiN_x PECVD Process

Influence of top electrodes to vibration modes in impulse responses of MEMS piezoelectric diaphragms for ultrasonic microsensors

T. Nishioka, T. Nishiumi, K. Yamashita and M. Noda
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, 606-8585, Japan
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, 2016, pp. 1-2.
doi: 10.1109/IMFEDK.2016.7521705

Ultrasonic micro sensors with piezoelectric diaphragms were fabricated to investigate the relationship between vibration mode and device structure of electrode and the diaphragms. Samco Deep Reactive Ion Etching system was used for anisotropic silicon plasma etching in the Bosch Process over SiO₂ mask.

For more details of our silicon plasma etching capabilities, please visit the process data pages below.

Silicon Plasma Etching Process Data (RIE and ICP-RIE)
Silicon Deep RIE Process Data Using the Bosch Process

Communication—A (001) β-Ga₂O₃ MOSFET with +2.9 V Threshold Voltage and HfO₂ Gate Dielectric

Marko J. Tadjerz, Nadeemullah A. Mahadik, Virginia D. Wheeler, Evan R. Glaser, Laura Ruppalt, Andrew D. Koehler, Karl D. Hobart, Charles R. Eddy Jr. and Fritz J. Kub
United States Naval Research Laboratory, Washington, DC 20375, USA
ECS J. Solid State Sci. Technol. 2016 volume 5, issue 9, P468-P470

Gallium Oxide (Ga₂O₃) is a wide bandgap material with high breakdown voltage, and it is a promising material for power device applications. Compared to other wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN), the device research using this material is still primitive. However, β-Ga₂O₃ substrates are commercially available, and more and more researchers are getting interested in its unique material properties.

Here, β-Ga₂O₃ MOSFET was fabricated using commercially available β-Ga₂O₃ substrates. Samco UV-Ozone Cleaner at United States Naval Research Laboratory was used for surface cleaning of SiO₂/Si substrate in sample preparation.

Anti-reflective surfaces: Cascading nano/microstructuring

Yoshiaki Nishijima¹ Ryosuke Komatsu¹ Shunsuke Ota¹, Gediminas Seniutinas² Armandas Balčytis^2,3 and Saulius Juodkazis^2
1 Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501, Japan
² Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
³ Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu¸ Avenue, LT-02300 Vilnius, Lithuania
APL PHOTONICS 1, 076104 (2016)

Anti-reflective surfaces were created employing plasma etching technologies. Samco ICP-RIE etcher was used for black silicon plasma etching (b-Si) to fabricate nanospike structures using fluorine chemistry.

For more process capabilities of our silicon plasma etching including the Bosch Process Etching, please visit the process data pages below.

Silicon Plasma Etching (RIE etch or ICP-RIE)
Deep Silicon Trench/Via Hole Etching using the Bosch Process

An electro-optic polymer-cladded TiO₂ waveguide modulator

Feng Qiu¹ Hiroki Miura², Andrew M. Spring¹, Jianxun Hong¹, Daisuke Maeda³, Masa-aki Ozawa³, Keisuke Odoi³ and Shiyoshi Yokoyama^1,2
1 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507, Japan
Appl. Phys. Lett. (2016) 109, 173301

Waveguide modulator device using organic electro-optic (EO) materials was studied in this research. Samco ICP plasma etcher was used for slot structure formation for TiO₂ plasma etching in fluorine chemistry during device fabrication.

Identifying DNA methylation in a nanochannel

Xiaoyin Sun^a,b, Takao Yasui^a,b,c, Takeshi Yanagida^d,e, Noritada Kaji^a,b, Sakon Rahong^a,b, Masaki Kanai^d, Kazuki Nagashima^d, Tomoji Kawai^e and Yoshinobu Baba^a,b,f
a Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Japan;
^b ImPAC T Research Center for Advanced Nanobiodevices, Nagoya University, Nagoya, Japan;
^c Japan Science and Technology Agency (JST), PRESTO, Saitama, Japan;
^d Institute of Materials Chemistry and Engineering, Kyushu University, Fukuoka, Japan;
^e Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan;
^f Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Takamatsu, Japan
Science and Technology of Advanced Materials (2016) VOL . 17, NO . 1, 644–649

A new method to analyze DNA methylation was proposed using a nano-channel device in this research. Samco RIE etch tool was used for  quartz plasma etching over Cr hard mask to fabricate nano-channel structures. The nano-channel device is effective to detect single DNA molecule.

For more details of our SiO₂ (quartz) plasma etching capabilities, please visit the process data page below.
SiO₂ Plasma Etching Process (RIE and ICP Etch)

A Mechanically Durable and Flexible Organic Rectifying Diode with a Polyethylenimine Ethoxylated Cathode

Naoji Matsuhisa, Hiroaki Sakamoto, Tomoyuki Yokota, Peter Zalar, Amir Reuveny, Sunghoon Lee and Takao Someya
Electrical and Electronic Engineering and Information Systems, University of Tokyo
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Advanced Electronic Materials Volume 2, Issue 10, October 2016

Flexible organic diode device fabrication is performed using Samco process equipment. Samco plasma cleaner PC-300 was used for wettability improvement of polyethylenimine ethoxylated (PEIE) surfaces and for work function improvement of gold (Au) electrode.

Someya lab, University of Tokyo is one of Samco plasma cleaner customers. Our plasma cleaner is used for organic transistor fabrication, and they have published several papers on cutting-edge flexible MEMS devices.

Go to Someya lab website.

Samco plasma cleaners are versatile tools for plasma treatment and cleaning of various materials. For metal surface cleaning, gold plasma treatment is one of the common surface cleaning technique before device packaging. Not only gold but also various metal materials can be processed including aluminum, silver & titanium. We have a special process technique to reduce corrosion risk of metal surfaces caused by plasma cleaning process. Furthermore, multiple shelves inside process chamber enable batch processing of several samples in one time. For more spec details of the plasma cleaners, please visit the product page below.

Plasma Cleaner

Design and fabrication of high-performance diamond triple-gate field-effect transistors

Jiangwei Liu ¹, Hirotaka Ohsato ², Xi Wang ¹, Meiyong Liao ³ & Yasuo Koide ^4
1 International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
² Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
³ Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
⁴ Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Scientific Reports 6, Article number: 34757 (2016)

Diamond is considered to be a material for next-generation power semiconductor devices due to high thermal conductivity and breakdown voltage. In this research, triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device was fabricated using a hydrogenated diamond (H-diamond) substrate. In device fabrication, Samco open-load Reactive Ion Etching (RIE) system at National Institute for Materials Science (NIMS) was used for diamond plasma etching to form a diamond mesa structure.

For our process capabilities of diamond plasma etching, please visit the process data page below.
Diamond Plasma Etching Process Data (RIE Etching & ICP Etching)
Also, for more information on process equipment which are suitable for diamond plasma etching, please visit the product page below,
Reactive Ion Etching (RIE) Systems
ICP Etching Systems