Ambipolar light-emitting organic single-crystal transistors with a grating resonator

Kenichi Maruyama¹, Kosuke Sawabe², Tomo Sakanoue¹, Jinpeng Li¹, Wataru Takahashi¹, Shu Hotta³, Yoshihiro Iwasa⁴ & Taishi Takenobu^1
1Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
²Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
³Faculty of Materials Science and Engineering Kyoto Institute of Technology, Kyoto 606-8585, Japan.
⁴Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan, RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Scientific Reports 5, Article number: 10221 (2015)
doi:10.1038/srep10221

Samco ICP etcher was used for dry etching of UV-curable resist and α,ω-bis(biphenylyl)terthiophene (BP3T) single-crystal in UV-nanoimprint lithography process for electrically driven organic laser fabrication.

A sub-micron-gap soi capacitive accelerometer array utilizing size effect

Matsui, Y.,  Hirai, Y., Tsuchiya, T. and Tabata, O.
Dept. of Micro Eng., Kyoto Univ., Kyoto, Japan
Presented at 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) at Anchorage, AK.

Samco Silicon DRIE System at Kyoto University was used for deep silicon etching in MEMS device fabrication.

Our process examples and capabilities of deep silicon etching can be found in the page below.
Deep Silicon Trench/Via Hole Etching using Bosch Process

Kyoto University is one of the proprietary customers of Samco silicon DRIE System for MEMS device fabrication.

Go to Tabata Lab, Kyoto University

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Qingpeng Wang^1,2, Ying Jiang^1,2, Jiaqi Zhang^1,2, Kazuya Kawaharada¹, Liuan Li¹, Dejun Wang² and Jin-Ping Ao^1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
² School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003

Samco PECVD system was used for gate oxide (SiO₂) formation in GaN MOSFET fabrication.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/

Also, SiO₂ PECVD process data can be found in the page below.
SiO₂ PECVD Process

Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process

Satoshi Inoue, Tue Trong Phan, Tomoko Hori, Hiroaki Koyama and Tatsuya Shimoda
Green Device Research Center, Japan Advanced Institute of Science and Technology, Ishikawa 923-1211, Japan
physica status solidi (a) Volume 212, Issue 10, pages 2133–2140, October 2015

Samco ICP etching system was used for plasma etching of the Ruthenium Oxide (RuO₂), Zr-In-Zn-O (ZIZO), Silicon Dioxide (SiO₂) and Indium Tin Oxide (ITO) films.

Our process capabilites of SiO₂ dry etching can be found in the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Three-dimensional Nanowire Structures for Ultra-Fast Separation of DNA, Protein and RNA Molecules

Sakon Rahong^1,2, Takao Yasui^2,3, Takeshi Yanagida⁴, Kazuki Nagashima⁴, Masaki Kanai⁴,
Gang Meng⁴, Yong He⁴, Fuwei Zhuge⁴, Noritada Kaji^2,3, Tomoji Kawai⁴ & Yoshinobu Baba^1,2,3,5
1 Institute of Innovation for Future Society, Nagoya University, JAPAN.
² FIRST Research Center for Innovative Nanobiodevices, Nagoya University, JAPAN.
³ Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, JAPAN.
⁴ The Institute of Scientific and Industrial Research, Osaka University, JAPAN.
⁵ Health Research Institute, National Institute of Advanced Industrial Science and. Technology (AIST), JAPAN.
Scientific Reports 5, Article number: 10584 (2015) doi:10.1038/srep10584

SAMCO Reactive Ion Etching System RIE-10NR was used for SiO₂ plasma etching over Cr mask. This process is used for micro-channel fabrication on microfluidic system which enables ultra-fast separation of biomolecules (DNA, Protein and RNA Molecules).

For our process examples and capabilities of SiO₂ plasma etching, please visit the process data page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

High precision fabrication of antennas and sensors

A. Balcytis^1,2,3, G. Seniutinas^1,2, D. Urbonas^1,3, M. Gabalis³ K. Vaskevicius³, R. Petruskevicius³, G. Molis⁴, G. Valusis⁵ and S. Juodkazis^1,2
1 Centre for Micro-Photonics and Industrial Research Institute Swinburne, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
² Melbourne Centre for Nanofabrication, 151 Wellington Road, Clayton, VIC 3168, Australia
³ Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu Avenue, LT-02300 Vilnius, Lithuania
⁴ Teravil Ltd, Vilnius, LT 01108, Lithuania
⁵ Semiconductor Physics Institute, Center for Physical Science and Technology, 11 A. Gostauto st., LT01108 Vilnius, Lithuania
Proc. SPIE 9446, Ninth International Symposium on Precision Engineering Measurement and Instrumentation, 94461G (March 6, 2015); doi:10.1117/12.2180814

SOI waveguide was fabricated using Samco ICP etch system for plasma etching of silicon against Cr mask.
For our process examples of silicon plasma etching, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

High-performance a-Si_1–xO_x:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si_1–xO_x:H stack buffer layer

He Zhang¹, Kazuyoshi Nakada², Shinsuke Miyajima² and Makoto Konagai^1,2
Phys. Status Solidi RRL (2015) 9: 225–229.
1 MEXT/FUTURE-PV Innovation Research, Japan Science and Technology (JST), Koriyama, Fukushima, Japan
2 Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan

Samco PECVD system was used for silicon thin film deposition in solar cell fabrication.

Buckling behavior of piezoelectric diaphragms for highly sensitive structures of ultrasonic microsensors controlled through intrinsic stress of PZT films

Yamashita, K.; Arai, K.; Tanaka, H.; Nishiumi, T.; Noda, M.
Graduate School of Science & Technology, Kyoto Institute of Technology, Kyoto, Japan
presented at Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the , vol., no., pp.44-47, 24-27 May 2015

SAMCO silicon DRIE system at Kyoto Institute of Technology was used for Silicon Dioxide (SiO₂) dry etching.
Our DRIE systems are equipped with SiO₂ etch kit for high-speed SiO₂ plasma etching. For more details, please visit our product page below.
Silicon Deep Reactive Ion Etching (DRIE) Systems

Also, for our process capabilities of SiO₂ plasma etching, please visit the process data page below.
SiO₂ Plasma Etching Process Data (RIE or ICP Etch)

A CMOS-Compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs

Lin, J., D. A. Antoniadis, and J. A. del Alamo
presented at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 239-242.

Samco ICP etching system, RIE-200iP was used for optimization of InGaAs/InAlAs/InP dry etching process.

Go to Prof. Jesús A. del Alamo Research Group Website

Single-Cell Isolation and Size Sieving Using Microenclosure Array for Microbial Analysis

Akihiro Matsutani^* and Ayako Takada¹
Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
¹Biomaterial Analysis Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
Sensors and Materials, Volume 27, Number 5 (2015)

Samco open-load ICP etch system was used for fabrication of micropillar fabrication on InP substrates for cell isolation and size sieving.

For more details of our InP plasma etching capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)