High-aspect-ratio nanoimprinted structures for a multi-pole magnetic scale

Zhi-Hao Xu¹, Chien-Li¹, Cheng-Kuo¹, Sheng-Ching³ and Tsung-Shune Chin^2
1 Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, TAIWAN
² Department of Materials Science & Engineering, Feng Chia University, Taichung 40724, TAIWAN
³ Department of Mechanical Engineering, National United University, Miaoli 36003, TAIWAN
Microsystem Technologies (2014) 20, 10, pp 1949-1953

SAMCO Plasma Cleaner was used for photoresist stripping/trimming in high-aspect-ratio structure.

For more details of our photoresist stripping & removal process solutions, please visit the page below.
Plasma Ashing & Stripping of Photoresist

Metal-Containing Block Copolymer Thin Films Yield Wire Grid Polarizers with High Aspect Ratio

So Youn Kim ¹, Jessica Gwyther ², Ian Manners ², Paul M. Chaikin ³, and Richard A. Register ¹
1 Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, USA
2 School of Chemistry, University of Bristol, Bristol, United Kingdom
3 Department of Physics, New York University, New York, USA
Adv. Mater., 26, 791-795 (2014)

Samco Silicon DRIE System at Princeton University was used for deep silicon etching using the Bosch Process.

For more details of our deep silicon etching capabilities, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Silicon Deep Etching Using the Bosch Process

Enhancement of electrical conductivity and electrochemical activity of hydrogenated amorphous carbon by incorporating boron atoms

Hiroshi Naragino, Kohsuke Yoshinaga, Akira Nakahara, Sakuya Tanaka and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida, Yamaguchi-shi, Yamaguchi 753-8512, Japan
Journal of Physics: Conference Series, 441, 2013 conference 1
Process and film properties of conductive boron-doped hydrogenated amorphous carbon (B-DLC) thin films was studied in this research. Samco PECVD system at Yamaguchi University was used for DLC film deposition.

Samco offers PECVD systems and process technology for deposition of various types of films such as SiO₂, SiN_x, TiO₂, amorphous carbon (a-Si), SiON, SiCN and DLC.
For more details of our system lineup, please visit the product pages below.
Anode PECVD Systems for High-quality Film Deposition
Cathode PECVD Systems for High-speed SiO₂ and SiN_x Film Deposition under 80 °C

Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency

Kohsuke Yoshinaga, Hiroshi Naragino, Akira Nakahara and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida,
Yamaguchi-shi, Yamaguchi, 753-8512, Japan
Journal of Physics: Conference Series (2013) 441, conference 1

SAMCO PECVD System was used for deposition of Nitrogen-doped amorphous silicon carbide films (N-doped a-SiC) to investigate the film properties.

Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

Kaiyu Cui, Yongzhuo Li, Xue Feng, Yidong Huang and Wei Zhang
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
AIP ADVANCES (2013) 3, 022122

InP photonic crystal waveguide was fabricated using SAMCO ICP Etch System.

For more details of our InP dry etching process capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)

Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)

SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.

For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)

Multi-channel PMMA microfluidic biosensor with integrated IDUAs for electrochemical detection

Nongnoot Wongkaew^a,b, Peng He^b, Vanessa Kurth^b, Werasak Surareungchai^a, and Antje J. Baeumner^b
aSchool of Bioresources and Technology, King Mongkut’s University of Technology Thonburi, Bangkhuntien, Bangkok 10150,Thailand ^bDepartment of Biological and Environmental Engineering, Cornell University, 202 Riley Robb Hall, Ithaca, NY 14853, USA
Anal Bioanal Chem. 2013 July ; 405(18): 5965–5974. doi:10.1007/s00216-013-7020-0.

Samco UV-Ozone Cleaner at Cornell University was used for oxidation of PMMA to generate carboxylic groups on the surface in microfluidic biosensor fabrication. Samco UV-Ozone cleaners are used for many R&D labs of polymer biosensor fabrication for bonding of polymer materials, such as PDMS, PMMA , COP & COC.

Structural Optimization of Metallic Infrared Filters Based on Extraordinary Optical Transmission

Makoto Ohkado¹, Tsuyoshi Nomura¹, Atushi Miura¹, Hisayoshi Fujikawa¹, Naoki Ikeda², Yoshimasa Sugimoto² and Shinji Nishiwaki^3
1Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan
²National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
³Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501, Japan
Transactions of the Materials Research Society of Japan (2013) 38, No. 2 p. 167-170

SiO₂ plasma etching and Al plasma etching were performed using Samco RIE system and ICP etch system, respectively to fabricate hole array structures of the infrared filter.

For more details of our SiO₂ dry etching capabilities, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

Mariana C. Prado¹, Deep Jariwala², Tobin J. Marks^2,3 and Mark C. Hersam^2,3
1 Departamento de Física, Universidade Federal de Minas Gerais, Av. Antônio Carlos, 6627, 31270-901 Belo Horizonte, Brazil
² Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
³ Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
Appl. Phys. Lett. (2013) 102, 193111

Samco RIE System at Northwestern University was used for investigation of reactive ion etching process of graphene.

Samco RIE systems are versatile tools for plasma etching of various materials including Si, SiO₂, SiN_x, metal, polymer and carbon-based materials.
For more information on our RIE system, please visit the product page below.
RIE Etching Systems

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl₃ surface plasma treatment

Tatsuya Fujishima¹, Sameer Joglekar¹, Daniel Piedra¹, Hyung-Seok Lee¹, Yuhao Zhang¹, Akira Uedono² and Tomás Palacios^1
1 Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA
² Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Appl. Phys. Lett. 103, 083508 (2013)

Surface treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors was developed using Samco ICP etch system.

For more details of our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication