Photonic Crystal Point-Shift Nanolasers With and Without Nanoslots—Design, Fabrication, Lasing, and Sensing Characteristics

Shota Kita, Kengo Nozaki, Shoji Hachuda, Hideki Watanabe, Yuji Saito, Shota Otsuka, Takeharu Nakada, Yoshiki Arita, and Toshihiko Baba
Department of Electrical and Computer Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
IEEE Journal of Selected Topics in Quantum Electronics, (2011) 17, 6

SAMCO ICP Etch System was used for recipe optimization of InP plasma etching. InP etch profile with a high aspect-ratio was successfully fabricated.

For our process capabilities of InP plasma etching, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)

Periodic Si nanopillar arrays by anodic aluminum oxide template and catalytic etching for broadband and omnidirectional light harvesting

Hsin-Ping Wang¹, Kun-Tong Tsai^1,2, Kun-Yu Lai¹, Tzu-Chiao Wei¹, Yuh-Lin Wang² and Jr-Hau He^1
1Institute of Photonics and Optoelectronics, & Department of Electrical Engineering, National Taiwan University,
Taipei 10617, Taiwan
²Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
Optics Express (2012) 20,S1, pp. A94-A103

Samco RIE etcher was used for silicon nanopillar fabrication by silicon plasma etching against anodic aluminum oxide (AAO) mask.

For more information on our silicon plasma etching process capabilities including the Bosch Process etching, please visit the process data pages below.
Silicon Plasma Etching (RIE or ICP Etch)
Silicon Deep Etching Using the Bosch Process

For more detail specs of our RIE etch equipment, please visit the product page below.
RIE Plasma Etcher

Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases

Hamad A. Albrithen¹, Gale S. Petrich², Leslie A. Kolodziejski³, Abdelmajid Salhi⁴ and Abdulrahman A. Almuhanna^4
1 Physics and Astronomy, KAIN, King Saud University, Riyadh, Riyadh, Saudi Arabia.
² Research Laboratory of Electronics, MIT, Cambridge, Massachusetts.
³ Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts.
⁴ National Center for Nano Technology Research, King Abdulaziz City for Science and Technology, Riyadh, Riyadh, Saudi Arabia.
MRS Proceedings 2012 1396, mrsf11-1396-o07-33
doi:10.1557/opl.2012.775.

GaSb plasma etching process over SiO₂ mask was investigated using Samco ICP etch system.
Anisotropic GaSb etching with smooth sidewalls were achieved with the recipe optimization.

For more details of our GaSb plasma etching capabilities, please visit the process data page below.
GaSb Plasma Etching

Fabrication of Vertically Aligned Diamond Whiskers from Highly Boron-Doped Diamond by Oxygen Plasma Etching

Chiaki Terashima¹, Kazuki Arihara⁴, Sohei Okazaki⁴, Tetsuya Shichi⁴, Donald A. Tryk⁵, Tatsuru Shirafuji², Nagahiro Saito^{1, 2, 3}, Osamu Takai^{1, 2, 3}, and Akira Fujishima^{4, 6
1} Research Center for Materials Backcasting Technology, Graduate School of Engineering, and ²Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, ³ EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
⁴ Technology Research and Development Department, General Technology Division, Central Japan Railway, 1545-33 Ohyama, Komaki City, Aichi 485-0801, Japan
⁵ Fuel Cell Nanomaterials Center, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan
⁶ Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku-ku, Tokyo 162-8601, Japan
ACS Appl. Mater. Interfaces, 2011, 3 (2), pp 177–182
DOI: 10.1021/am1007722

Samco open-load Plasma Etching System was used for diamond plasma etching to fabricate vertically aligned diamond whiskers.

For more details of our diamond plasma etching technologies, please visit the diamond process data page below.
Diamond Dry Etching Process (RIE or ICP-RIE)