Fast patterning and dry-etch of SiNx for high resolution nanoimprint templates

Shu Zhen¹, Wan Jing¹, Lu Bingrui¹, Xie Shenqi¹, Chen Yifang²., Qu Xinping¹ and Liu Ran^1
1 State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
² Micro and Nanotechnology Centre, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, OX11 0QX, UK
Journal of Semiconductors (2009) 30, 6

SAMCO Plasma Etching System was used for patterning of SiN_x film (SiN_x plasma etching) with high aspect ratio and vertical sidewalls.

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

J. H. Leach, M. Wu, X. Ni, X. Li, Ü . Ö zgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond VA, 23284, USA
Phys. Status Solidi A, 207: 211–216 (2009).

The field effect transistors were fabricated using Ti/Al/Ni/Au Ohmic contacts followed by etched mesa isolation in a Samco ICP Etch System RIE-101iPH using a Cl-based chemistry.

Virginia Commonwealth University is one of Samco customers using our ICP etch system for AlGaN and GaN plasma etching processes in GaN-based power device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory website

Northwestern University is a proud customer of SAMCO RIE system, RIE-10NR. The system is used for various types of research including device fabrication.