Category: Photonic Devices
Scientific Paper on Silicon Photonic Circuit Fabrication from University of Delaware
Packaging and design of a heterogeneous dual laser chip for a widely tunable spectrally pure optical RF source
David W. Grund Jr., Garrett J. Schneider, Janusz Murakowski, and Dennis W. Prather
Electrical and Computer Engineering, University of Delaware, Newark, Delaware, USA
Optics Express (2014) 22, 17, pp. 19838-19849
Samco ICP Etch System was used for silicon fine etching.
Then, Samco PECVD System was used for SiO2 layer deposition to isolate a metal heater from the etched silicon layer.
For details of SiO2 PECVD process capabilities, please visit the page below.
SiO2 PECVD Process
Scientific Paper on Silicon Photonic Device Fabrication Using Silicon Plasama Etching by University of Delaware
A Widely Tunable Narrow Linewidth RF Source Integrated in a Heterogeneous Photonic Module
David W. Grund, Garrett A. Ejzak, Garrett J. Schneider, Janusz Murakowski and Dennis W. Prather
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Journal of Lightwave Technology (2014) 32, 7, pp. 1363-1369
SAMCO ICP Etch System was used for silicon plasma etching in silicon-photonic integrated circuit fabrication.
For more details of our silicon plasma etching capabilities, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Scientific Paper on Terahertz Quantum Cascade Lasers Using GaAs Dry Etch from Paul-Drude-Institut für Festkörperelektronik, Germany
High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback
M. Wienold, B. Röben, L. Schrottke, R. Sharma, A. Tahraoui, K. Biermann and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
Opt Express. (2014) 22 (3):3334-48
SAMCO ICP Etch System is used for fabrication of GaAs/AlGaAs terahertz quantum-cascade lasers (THz QCLs).
For more details of our GaAs dry etch capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)
Scientific Paper on Fabrication of InP Photonic Crystal Waveguide from Tsinghua University, China
Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure
Kaiyu Cui, Yongzhuo Li, Xue Feng, Yidong Huang and Wei Zhang
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
AIP ADVANCES (2013) 3, 022122
InP photonic crystal waveguide was fabricated using SAMCO ICP Etch System.
For more details of our InP dry etching process capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on Metallic Infrared Filter Fabrication Using Al Plasma Etching by NIMS, Japan
Structural Optimization of Metallic Infrared Filters Based on Extraordinary Optical Transmission
Makoto Ohkado1, Tsuyoshi Nomura1, Atushi Miura1, Hisayoshi Fujikawa1, Naoki Ikeda2, Yoshimasa Sugimoto2 and Shinji Nishiwaki3
1Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan
2National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
3Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501, Japan
Transactions of the Materials Research Society of Japan (2013) 38, No. 2 p. 167-170
SiO2 plasma etching and Al plasma etching were performed using Samco RIE system and ICP etch system, respectively to fabricate hole array structures of the infrared filter.
For more details of our SiO2 dry etching capabilities, please visit the page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on AlN Nanocavity Fabrication Using AlN Plasma Etching from the University of Tokyo
High-Q AlN photonic crystal nanobeam cavities fabricated by layer transfer
S. Sergent1, M. Arita1, S. Kako1, K. Tanabe1, S. Iwamoto1,2 and Y. Arakawa1,2
1 Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
2 Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
Appl. Phys. Lett. 101, 101106 (2012)
AlN nanopattern was fabricated by AlN plasma etching using Samco ICP etch system to improve the quality factor of nanobeam cavities.
For more information on our ICP etching sytems, please visit the product page below.
Samco ICP Plasma Etcher
Scientific Paper on Quantum-Cascade Laser Using GaAs Dry Etching by Paul-Drude-Institut
Lateral distributed-feedback gratings for single-mode, high-power terahertz quantum-cascade lasers
M. Wienold, A. Tahraoui, L. Schrottke, R. Sharma, X. Lü, K. Biermann, R. Hey, and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Optics Express Vol.20, Issue 10, pp. 11207-11217 (2012)
SAMCO ICP Etching System was used for GaAs/AlGaAs dry etching over SiO2 mask in fabrication of Terahertz quantum-cascade lasers (THz QCLs).
For our capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)
Scientific Paper on Photonic Crystal Laser Fabrication Using InP Plasma Etching by Yokohama National University
Photonic Crystal Point-Shift Nanolasers With and Without Nanoslots—Design, Fabrication, Lasing, and Sensing Characteristics
Shota Kita, Kengo Nozaki, Shoji Hachuda, Hideki Watanabe, Yuji Saito, Shota Otsuka, Takeharu Nakada, Yoshiki Arita, and Toshihiko Baba
Department of Electrical and Computer Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
IEEE Journal of Selected Topics in Quantum Electronics, (2011) 17, 6
SAMCO ICP Etch System was used for recipe optimization of InP plasma etching. InP etch profile with a high aspect-ratio was successfully fabricated.
For our process capabilities of InP plasma etching, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on GaInAsP/InP Photonic Crystal Lasers Using InP Etching by Yokohama National University
Fabrication of GaInAsP/InP photonic crystal lasers by ICP etching and control of resonant mode in point and line composite defects
Kyoji Inoshita and Toshihiko Baba
Department of Electrical & Computer Engineering, Yokohama National University, Japan
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2003) 9, NO. 5, SEPTEMBER/OCTOBER
Samco ICP plasma etcher was used for InP plasma etching in GaInAsP/InP photonic crystal laser fabrication.
For more details on our InP plasma etching technologies, please visit the process data page below.
InP Plasma Etching