Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation

HIROMU SATO¹, HIROKI MIURA¹ FENG QIU² ANDREW M. SPRING², TSUBASA KASHINO³, TAKAMASA KIKUCHI³, MASAAKI OZAWA³, HIDEYUKI NAWATA³, KEISUKE ODOI³, SHIYOSHI YOKOYAMA^1,2
1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)

An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO₂ substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.

For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data

An electro-optic polymer-cladded TiO₂ waveguide modulator

Feng Qiu¹ Hiroki Miura², Andrew M. Spring¹, Jianxun Hong¹, Daisuke Maeda³, Masa-aki Ozawa³, Keisuke Odoi³ and Shiyoshi Yokoyama^1,2
1 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507, Japan
Appl. Phys. Lett. (2016) 109, 173301

Waveguide modulator device using organic electro-optic (EO) materials was studied in this research. Samco ICP plasma etcher was used for slot structure formation for TiO₂ plasma etching in fluorine chemistry during device fabrication.

Mesoporous silica layer on plasmonic array: light trapping in a layer with a variable index of refraction

Shunsuke Murai^{1, 2}, Hiroyuki Sakamoto¹, Koji Fujita¹, and Katsuhisa Tanaka^1
1 Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto, 615-8510, Japan
² PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
Optical Materials Express Vol. 6, Issue 9, pp. 2736-2744 (2016) doi: 10.1364/OME.6.002736

Plasmonic array was fabricated using nanoimprint technology. First, silicon mold consisting of a periodic square array was fabricated using silicon deep etching. Samco silicon DRIE system at Kyoto University was used for the mold fabrication. Then, Samco ICP etch system was used for pattern transfer by aluminum dry etching over photoresist pattern fabricated by the nanoimprint process.

Phase-modulating lasers toward on-chip integration

Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yu Takiguchi & Yoshiro Nomoto
Central Research Laboratory, Hamamatsu Photonics K.K., Shizuoka 434-8601, Japan.
Scientific Reports 6, Article number: 30138 (2016)
doi:10.1038/srep30138

Samco Load-lock ICP-RIE System was used for GaAs-based hole array fabrication in dry etching for phase-modulating laser fabrication.

For our process examples and capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Plasma Etching Process (ICP-RIE)

Athermal Hybrid Silicon/Polymer Ring Resonator Electro-optic Modulator

Feng Qiu¹, Andrew M. Spring¹, Hiroki Miura², Daisuke Maeda³, Masa-aki Ozawa³, Keisuke Odoi³, and Shiyoshi Yokoyama^{1, 2
1} Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries, LTD, 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507, Japan
ACS Photonics
DOI: 10.1021/acsphotonics.5b00695

Silicon plasma etching was performed using Samco silicon DRIE system to fabricate a hybrid silicon/polymer ring resonator electro-optic (EO) modulator.
For our process examples of silicon plasma etching, please visit process data page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV

Photonic nanojet induced modes generated by a chain of dielectric microdisks

Cheng-Yang Liu, Chun-Ci Li
Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, New Taipei City, Taiwan
Optik – International Journal for Light and Electron Optics (2016) 127, 1, pp 267–27

Samco Reactive Ion Etching (RIE) system was used for dielectric layer etching to fabricate a microdisc device.

Fabrication of artificial graphene in a GaAs quantum heterostructure

Diego Scarabelli, Sheng Wang, Aron Pinczuk, and Shalom J. Wind
Department of Applied Physics and Applied Mathematics, Columbia University, 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
Yuliya Y. Kuznetsova
Department of Physics, Columbia University, 538 W. 120th St., 704 Pupin Hall MC 5255, New York, New York 10027
Loren N. Pfeiffer and Ken West
Department of Electrical Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544
Geoff C. Gardner and Michael J. Manfra
Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University, 525 Northwestern Avenue, West Lafayette, Indiana 47907
Vittorio Pellegrini
Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy and NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
Journal of Vacuum Science & Technology B 33, 06FG03 (2015); doi: 10.1116/1.4932672

SAMCO ICP Etch System at Princeton University was used for anisotropic plasma etching of GaAs/AlGaAs to fabricate vertical quantum hetero-structures.

For our process capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

Ambipolar light-emitting organic single-crystal transistors with a grating resonator

Kenichi Maruyama¹, Kosuke Sawabe², Tomo Sakanoue¹, Jinpeng Li¹, Wataru Takahashi¹, Shu Hotta³, Yoshihiro Iwasa⁴ & Taishi Takenobu^1
1Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
²Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
³Faculty of Materials Science and Engineering Kyoto Institute of Technology, Kyoto 606-8585, Japan.
⁴Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan, RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Scientific Reports 5, Article number: 10221 (2015)
doi:10.1038/srep10221

Samco ICP etcher was used for dry etching of UV-curable resist and α,ω-bis(biphenylyl)terthiophene (BP3T) single-crystal in UV-nanoimprint lithography process for electrically driven organic laser fabrication.

High precision fabrication of antennas and sensors

A. Balcytis^1,2,3, G. Seniutinas^1,2, D. Urbonas^1,3, M. Gabalis³ K. Vaskevicius³, R. Petruskevicius³, G. Molis⁴, G. Valusis⁵ and S. Juodkazis^1,2
1 Centre for Micro-Photonics and Industrial Research Institute Swinburne, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
² Melbourne Centre for Nanofabrication, 151 Wellington Road, Clayton, VIC 3168, Australia
³ Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu Avenue, LT-02300 Vilnius, Lithuania
⁴ Teravil Ltd, Vilnius, LT 01108, Lithuania
⁵ Semiconductor Physics Institute, Center for Physical Science and Technology, 11 A. Gostauto st., LT01108 Vilnius, Lithuania
Proc. SPIE 9446, Ninth International Symposium on Precision Engineering Measurement and Instrumentation, 94461G (March 6, 2015); doi:10.1117/12.2180814

SOI waveguide was fabricated using Samco ICP etch system for plasma etching of silicon against Cr mask.
For our process examples of silicon plasma etching, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

Athermal and High-Q Hybrid TiO₂–Si₃N₄ Ring Resonator via an Etching-Free Fabrication Technique

Feng Qiu, Andrew M. Spring, and Shiyoshi Yokoyama*
Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka, 816-8580, Japan
ACS Photonics (2015) 2, 3 pp 405–409

Samco PECVD system was used for Si3N4 deposition to fabricate a ring resonator.

For more details of our SiN_x PECVD process capabilities, please visit the page below.
SiN_x PECVD Process