A Platform for CMOS Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with an MgO Interlayer

Kai Ding ¹, Dhruv Fomra ¹, Alexander V. Kvit ², Hadis Morkoç ¹, Nathaniel Kinsey ¹, Ümit Özgür ¹ and Vitaliy Avrutin ^1
1 Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, 23284 USA
² Materials Science Center, University of Wisconsin‐Madison, Madison, WI, 53706 USA
Advanced Photonics Research, 2000210 (2021)

A CMOS compatible hybrid-plasmonic-photonic waveguide was fabricated using TiN layer deposited by PEALD on Si (001) substrate with MgO interlayer. Samco ICP-RIE system RIE-101iPH was used for TiN/Au etching in chlorine chemistry and also Si etching in fluorine chemistry.

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Plasmonic arrays of titanium nitride nanoparticles fabricated from epitaxial thin films

Shunsuke Murai, Koji Fujita, Yohei Daido, Ryuichiro Yasuhara, Ryosuke Kamakura, and Katsuhisa Tanaka
Shunsuke Murai^1,2 Koji Fujita^1,3> Yohei Daido¹ Ryuichiro Yasuhara¹ Ryosuke Kamakura¹ and Katsuhisa Tanaka^1
1 Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan.
Optics Express Vol. 24, Issue 2, pp. 1143-1153 (2016) •doi: 10.1364/OE.24.001143

Titanium Nitiride (TiN) nanoparticle arrays were fabricated using nanoimprint technologies.
For nanoimprint mold fabrication, Samco deep silicon etching system at Kyoto University was used for nanostructure fabrication on silicon molds. After transferring of the silicon mold pattern to photoresist on TiN substrate, Samco ICP etching system at Kyoto University was used for TiN dry etching over photoresist to fabricate TiN nanoparticle arrays.