Category: Other Materials Etch
Scientific Paper on Sapphire Plasma Etching from National Tsing-Hua University, Taiwan
Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities
P-C Chen1, P-T Lin1, D G Mikolas1, Y-W Tsai2, Y-L Wang1, C-C Fu1 and S-L Chang2
1 Institute of Nano Engineering and Microsystems, National Tsing-Hua University, No. 101, Kuang-fu Rd, Sec. II, Hsinchu 300, Taiwan
2 Department of Physics, National Tsing-Hua University, No. 101, Kuang-fu Rd, Sec. II, Hsinchu 300, Taiwan
J. Micromech. Microeng. (2015) 25 015016
Samco ICP Etching System was used for the recipe optimization of sapphire plasma etching in x-ray resonant cavity fabrication.
For our process capabilities of sapphire plasma etching, please visit the page below.
Sapphire Dry Etching Process (ICP-RIE)
Scientific Paper on Nb-TiO2 Dry Etching Process from Tokyo Institute of Technology
Angled etching of (001) rutile Nb–TiO2 substrate using SF6-based capacitively coupled plasma reactive ion etching
Akihiro Matsutani1, Kunio Nishioka1, Mina Sato1, Dai Shoji1, Daito Kobayashi2, Toshihiro Isobe2, Akira Nakajima2, Tetsu Tatsuma3 and Sachiko Matsushita2
1 Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
2 Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
3 Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
Jpn. J. Appl. Phys. (2014) 53 06JF02
Rutile Nb–TiO2 substrates were etched using Samco Reactive Ion Etch (RIE) System. Vertical sidewalls and a smooth surface were successfully achieved.
Scientific Paper on High-aspect-ratio Nanoimprinted Structure Fabrication from National Tsing Hua University
High-aspect-ratio nanoimprinted structures for a multi-pole magnetic scale
Zhi-Hao Xu1, Chien-Li1, Cheng-Kuo1, Sheng-Ching3 and Tsung-Shune Chin2
1 Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, TAIWAN
2 Department of Materials Science & Engineering, Feng Chia University, Taichung 40724, TAIWAN
3 Department of Mechanical Engineering, National United University, Miaoli 36003, TAIWAN
Microsystem Technologies (2014) 20, 10, pp 1949-1953
SAMCO Plasma Cleaner was used for photoresist stripping/trimming in high-aspect-ratio structure.
For more details of our photoresist stripping & removal process solutions, please visit the page below.
Plasma Ashing & Stripping of Photoresist
Scientific Paper on Metallic Infrared Filter Fabrication Using Al Plasma Etching by NIMS, Japan
Structural Optimization of Metallic Infrared Filters Based on Extraordinary Optical Transmission
Makoto Ohkado1, Tsuyoshi Nomura1, Atushi Miura1, Hisayoshi Fujikawa1, Naoki Ikeda2, Yoshimasa Sugimoto2 and Shinji Nishiwaki3
1Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan
2National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
3Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501, Japan
Transactions of the Materials Research Society of Japan (2013) 38, No. 2 p. 167-170
SiO2 plasma etching and Al plasma etching were performed using Samco RIE system and ICP etch system, respectively to fabricate hole array structures of the infrared filter.
For more details of our SiO2 dry etching capabilities, please visit the page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on Graphene Etching from Northwestern University
Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis
Mariana C. Prado1, Deep Jariwala2, Tobin J. Marks2,3 and Mark C. Hersam2,3
1 Departamento de Física, Universidade Federal de Minas Gerais, Av. Antônio Carlos, 6627, 31270-901 Belo Horizonte, Brazil
2 Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
3 Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
Appl. Phys. Lett. (2013) 102, 193111
Samco RIE System at Northwestern University was used for investigation of reactive ion etching process of graphene.
Samco RIE systems are versatile tools for plasma etching of various materials including Si, SiO2, SiNx, metal, polymer and carbon-based materials.
For more information on our RIE system, please visit the product page below.
RIE Etching Systems
Scientific Paper on Pb(Zr,Ti)O 3 thin film based resonators Using PZT Plasma Etching from Beihang University
Monolithic integration of Pb(Zr,Ti)O3 thin film based resonators using a complete dry microfabrication process
Yonggang Jiang1 , Kensuke Kanda2,3, Yuki Iga2, Takayuki Fujita2,3, Kohei Higuchi2, Kazusuke Maenaka2,3
1 School of Mechanical Engineering and Automation, Beihang University, Xueyuan Road No. 37, Haidian District, Beijing, 100191, China
2 Maenaka Human-Sensing Fusion Project, ERATO, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
3 Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
Microsyst Technol (2013) 19:137–142
SAMCO ICP etch system was used for PZT plasma etching to fabricate thin film MEMS resonators.
Scientific Paper on Wrinkled PDMS Film Fabrication from Nanjing University, China
Crack-free controlled wrinkling of a bilayer film with a gradient interface
Yan Xuana Xu Guoa Yushuang Cuia Changsheng Yuana Haixiong Gea Bo Cuib and Yanfeng Chena
a National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
b Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue, West Waterloo, Ontario N2L3G1, Canada
Soft Matter (2012) 8, 9603
SAMCO Plasma Etching System (RIE etcher) was used for plasma etching of silicon-containing resist and PMMA to fabricate wrinkled films.
Scientific Paper on AlN Nanocavity Fabrication Using AlN Plasma Etching from the University of Tokyo
High-Q AlN photonic crystal nanobeam cavities fabricated by layer transfer
S. Sergent1, M. Arita1, S. Kako1, K. Tanabe1, S. Iwamoto1,2 and Y. Arakawa1,2
1 Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
2 Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
Appl. Phys. Lett. 101, 101106 (2012)
AlN nanopattern was fabricated by AlN plasma etching using Samco ICP etch system to improve the quality factor of nanobeam cavities.
For more information on our ICP etching sytems, please visit the product page below.
Samco ICP Plasma Etcher
Scientific Paper on Whisker Fabrication Using Diamond Etching from Nagoya University Team
Fabrication of Vertically Aligned Diamond Whiskers from Highly Boron-Doped Diamond by Oxygen Plasma Etching
Chiaki Terashima1, Kazuki Arihara4, Sohei Okazaki4, Tetsuya Shichi4, Donald A. Tryk5, Tatsuru Shirafuji2, Nagahiro Saito1, 2, 3, Osamu Takai1, 2, 3, and Akira Fujishima4, 6
1 Research Center for Materials Backcasting Technology, Graduate School of Engineering, and 2Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, 3 EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
4 Technology Research and Development Department, General Technology Division, Central Japan Railway, 1545-33 Ohyama, Komaki City, Aichi 485-0801, Japan
5 Fuel Cell Nanomaterials Center, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan
6 Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku-ku, Tokyo 162-8601, Japan
ACS Appl. Mater. Interfaces, 2011, 3 (2), pp 177–182
DOI: 10.1021/am1007722
Samco open-load Plasma Etching System was used for diamond plasma etching to fabricate vertically aligned diamond whiskers.
For more details of our diamond plasma etching technologies, please visit the diamond process data page below.
Diamond Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on FeSi2 Plasma Etching from University of Tsukuba
Reactive Ion Etching of β-FeSi2 with Inductively Coupled Plasma
Takayuki Wakayama, Takashi Suemasu, Tomomi Kanazawa and Hiroyuki Akinaga
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Jpn. J. Appl. Phys. (2006) 45 L569
Samco ICP-RIE etcher was used for plasma etch recipe development of β-FeSi2 on a silicon substrate using fluorine chemistry.
High etch selectivity of β-FeSi2 against silicon was investigated.
Please visit our product page for more details of our ICP plasma etch systems.
ICP Plasma Etch Systems for Si, SiO2, III-V & Metal