Effect of oxygen terminated surface of boron-doped diamond thin-film electrode on seawater salinity sensing

Dan Shi ^a,b, Lusheng Liu ^a, Zhaofeng Zhai ^a, Bin Chen ^a,b, Zhigang Lu ^a,b, Chuyan Zhang ^a,c, Ziyao Yuan ^a,b, Meiqi Zhou ^a,b, Bing Yang ^a , Nan Huang ^a and Xin Jiang ^a,c
a Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
^b School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
^c Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, Siegen, 57076, Germany
Journal of Materials Science & Technology, Volume 86, Pages 1-10 (2021)

Boron-doped diamond is an interesting material for sensing application. Samco open-load RIE system RIE-10NR was used for patterning and surface treatment in oxygen plasma.

A Platform for CMOS Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with an MgO Interlayer

Kai Ding ¹, Dhruv Fomra ¹, Alexander V. Kvit ², Hadis Morkoç ¹, Nathaniel Kinsey ¹, Ümit Özgür ¹ and Vitaliy Avrutin ^1
1 Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, 23284 USA
² Materials Science Center, University of Wisconsin‐Madison, Madison, WI, 53706 USA
Advanced Photonics Research, 2000210 (2021)

A CMOS compatible hybrid-plasmonic-photonic waveguide was fabricated using TiN layer deposited by PEALD on Si (001) substrate with MgO interlayer. Samco ICP-RIE system RIE-101iPH was used for TiN/Au etching in chlorine chemistry and also Si etching in fluorine chemistry.

For more details of our ICP-RIE etch systems, please visit the product page below.
ICP-RIE Etch Systems

A VHF temperature compensated lithium niobate-on-oxide resonator with Q > 3900 for low phase noise oscillators

Grace W. Fang^a, Gayathri Pillai^b, Ming-Huang Li^c, Chun-You Liu^a, Sheng-Shian Li^a
a Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu, Taiwan
^b Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan
^c MNTL, University of Illinois at Urbana Champaign, Urbana, IL, USA

2018 IEEE Micro Electro Mechanical Systems (MEMS), Belfast, 2018, pp. 723-726.

LiNbO₃-based resonator with high Q over 3900 was fabricated in this research. Samco Reactive Ion Etching Tool was used for LiNbO₃ etching with SiO₂ in chlorine-based chemistry.

Samco is capable of high-quality plasma etching processes of various materials. Please see our process data page for more details.
Plasma Etching & PECVD Process Data

Optically-rough and physically-flat TCO substrates for superstrate-type thin-film solar cells: Sol-gel Zn_1−xMg_xO coating on reaction-ion etched glass substrates

Lei Meng and Shinsuke Miyajima
Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, 2-12-1-NE-17, Ookayama, Meguro-ku, Tokyo, Japan
Solar Energy Materials and Solar Cells 2017 172, pp 230-237
Optically-rough and physically-flat transparent conductive oxides (TCO) substrates were created on glass substrates to promote light absorption of solar cells. Al doped Zn1−xMgxO (AZMO) transparent conductive thin film was etched in CFx based plasma using Samco RIE etcher RIE-10NR. The effects of gas mixture composition on etch rate was investigated.

Samco offers multiple types of RIE etchers from tabletop to 450 mm for various applications (plasma etching, photoresist ashing and plasma treatment). For more information on Samco RIE etcher lineup, please visit the product page below.
RIE Etcher (from tabletop to 450 mm)

Deposition of TiO₂/Al₂O₃ bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

J. W. Liu¹, M. Y. Liao¹, M. Imura¹, R. G. Banal¹, and Y. Koide^2
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
² Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
JOURNAL OF APPLIED PHYSICS 121, 224502 (2017)

Diamond-based power devices are expected to see emerging applications which require high breakdown voltage. In this paper, MOSFET, MOS capactors and MOS logic inverter were fabricated using hydro-generated diamond.
Plasma etching of H-diamond channel layer was performed using Samco RIE etcher, RIE-200NL. Samco offers several plasma etching systems for customers who actively working on diamond power device research. For more details of plasma etching systems for diamond etching, please visit the product pages below.

RIE Plasma Etcher
ICP Etcher

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y₂O₃ oxide insulator grown by electron beam evaporator

J. W. Liu¹ H. Oosato² M. Y. Liao¹ and Y. Koide^3
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
² Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
³ Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
APPLIED PHYSICS LETTERS 110, 203502 (2017)

Hydrogenated diamond-based MOSFET is a promising next-generation power device as well as SiC- or GaN-based devices. The device research on this material is still under development.
In this paper, H-diamond MOSFET with an Y₂O₃ oxide insulator was fabricated. Samco RIE etcher, RIE-200NL was used for mesa etching of H-diamond layer.

Samco RIE etchers offer diamond plasma etching process solutions for emerging power device research communities. For more details on our equipment lineup and specifications, please visit the product page below.
RIE Etcher for R&D and Production

If you are interested in diamond etching processes, please visit the process data page below.
Diamond Plasma Etching

A novel PMMA/NEB bilayer process for sub-20 nm gold nanoslits by a selective electron beam lithography and dry etch

Xiaqi Huang^a, Jinhai Shao^a, ChialinTsou^a, Sichao Zhang^a, Bingrui Lu^a, Ling Hao^b, Yan Sun^c, and Yifang Chen^a
a Nanolithogrophy and Application Research Group, State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
^b National Physical Laboratory, Teddington TW11 0LW, UK
^c National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Microelectronic Engineering (2017) 172, Pages 13-18

Gold nanoslit structures were fabricated using process parameter optimization of electron beam lithography and dry etching. Samco plasma etcher RIE-10NR was used for dry etching of PMMA layer in oxygen plasma treatment.

Hierarchically nanostructured boron-doped diamond electrode surface

Takeshi Kondo^{a, b, c}, Keita Yajima^a, Tsuyoshi Kato^a, Masahiro Okano^d, Chiaki Terashima^{b, c}, Tatsuo Aikawa^a, Masanori Hayase^{b, d}, Makoto Yuasa^{a, b, c}

^a Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
^b Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
^c ACT-C/JST, 4-1-8 Honcho, Kawaguchi, Saitama 333-0012, Japan
^d Department of Mechanical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Diamond and Related Materials (2016)
A boron-doped diamond (BDD) electrode with a large specific surface area was fabricated. The combination of thermal treatment and whisker formation by diamond plasma etching was employed for nano-texturing of diamond surfaces. Samco open-load Reactive Ion Etcher, RIE-10NR was used for diamond plasma etching process.

For more details of our diamond plasma etching technologies and capabilities, please visit the process data page below.
Diamond Plasma Etching (RIE and ICP Etch)

An electro-optic polymer-cladded TiO₂ waveguide modulator

Feng Qiu¹ Hiroki Miura², Andrew M. Spring¹, Jianxun Hong¹, Daisuke Maeda³, Masa-aki Ozawa³, Keisuke Odoi³ and Shiyoshi Yokoyama^1,2
1 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507, Japan
Appl. Phys. Lett. (2016) 109, 173301

Waveguide modulator device using organic electro-optic (EO) materials was studied in this research. Samco ICP plasma etcher was used for slot structure formation for TiO₂ plasma etching in fluorine chemistry during device fabrication.

Design and fabrication of high-performance diamond triple-gate field-effect transistors

Jiangwei Liu ¹, Hirotaka Ohsato ², Xi Wang ¹, Meiyong Liao ³ & Yasuo Koide ^4
1 International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
² Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
³ Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
⁴ Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Scientific Reports 6, Article number: 34757 (2016)

Diamond is considered to be a material for next-generation power semiconductor devices due to high thermal conductivity and breakdown voltage. In this research, triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device was fabricated using a hydrogenated diamond (H-diamond) substrate. In device fabrication, Samco open-load Reactive Ion Etching (RIE) system at National Institute for Materials Science (NIMS) was used for diamond plasma etching to form a diamond mesa structure.

For our process capabilities of diamond plasma etching, please visit the process data page below.
Diamond Plasma Etching Process Data (RIE Etching & ICP Etching)
Also, for more information on process equipment which are suitable for diamond plasma etching, please visit the product page below,
Reactive Ion Etching (RIE) Systems
ICP Etching Systems