Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

M. Cihan Çakır^1,2 ,Deniz Çalışkan¹, Bayram Bütün¹ and Ekmel Özbay^1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
² Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
³ Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey

Samco PECVD system at Bilkent University was used for Si₃N₄ film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si₃N₄ against Si etch mask for ITO gas sensor fabrication.

For more information on our Si₃N₄ PECVD process capabilities, please visit the process data page below.
Si₃N₄ PECVD Process Data

For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO₂, Si₃N₄, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO₂ and Si₃N₄ Film Deposition
ICP-RIE Plasma Etcher for Si, SiO₂, III-V & Metal Etching

300-nm Imperceptible, Ultraflexible, and Biocompatible e-Skin Fit with Tactile Sensors and Organic Transistors

Robert A. Nawrocki¹, Naoji Matsuhisa^1,2, Tomoyuki Yokota¹ and Takao Someya^1
1 Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, Japan
² Advanced Leading Graduate Course for Photon Science, Bunkyo-ku, Tokyo, Japan
Advanced Electronic Materials (2016)

Samco open-load RIE etcher was used for contact hole formation of encapsulation layers.

A sub-micron-gap soi capacitive accelerometer array utilizing size effect

Matsui, Y.,  Hirai, Y., Tsuchiya, T. and Tabata, O.
Dept. of Micro Eng., Kyoto Univ., Kyoto, Japan
Presented at 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) at Anchorage, AK.

Samco Silicon DRIE System at Kyoto University was used for deep silicon etching in MEMS device fabrication.

Our process examples and capabilities of deep silicon etching can be found in the page below.
Deep Silicon Trench/Via Hole Etching using Bosch Process

Kyoto University is one of the proprietary customers of Samco silicon DRIE System for MEMS device fabrication.

Go to Tabata Lab, Kyoto University

Buckling behavior of piezoelectric diaphragms for highly sensitive structures of ultrasonic microsensors controlled through intrinsic stress of PZT films

Yamashita, K.; Arai, K.; Tanaka, H.; Nishiumi, T.; Noda, M.
Graduate School of Science & Technology, Kyoto Institute of Technology, Kyoto, Japan
presented at Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the , vol., no., pp.44-47, 24-27 May 2015

SAMCO silicon DRIE system at Kyoto Institute of Technology was used for Silicon Dioxide (SiO₂) dry etching.
Our DRIE systems are equipped with SiO₂ etch kit for high-speed SiO₂ plasma etching. For more details, please visit our product page below.
Silicon Deep Reactive Ion Etching (DRIE) Systems

Also, for our process capabilities of SiO₂ plasma etching, please visit the process data page below.
SiO₂ Plasma Etching Process Data (RIE or ICP Etch)

Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography

Harutaka Mekaru
Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of
Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
Micromachines 2015, 6, 252-265

Samco open-load Plasma Etching System (RIE etcher) was used for SiO₂ dry etching in the device fabrication. The SiO₂ layer was successfully removed without breaking the SU-8 membrane.

For our process capabilities of SiO₂ dry etching, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Fabrication and Characterization of a Novel Nanoscale Thermal Anemometry Probe

Margit Vallikivi and Alexander J. Smits
Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 USA
Journal of Microelectromechanical Systems (2014) 23 , 4

Samco Silicon DRIE System at Princeton University was used for slope formation from a silicon substrate to fabricate a MEMS-based nanoscale thermal anemometry probe.

For more details of our deep silicon etching capabilities using the Bosch Process, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Etching Process Data Using the Bosch Process

A transfer technique of stress sensors for versatile applications

C. Dou, H. Yang, Y. Wu and X. Li
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on, Suzhou, 2013, pp. 931-934.
doi: 10.1109/NEMS.2013.6559876

Samco open-load RIE etch system was used for SiO₂ layer removal in device fabrication.

For more details of our SiO₂ plasma etching capabilities, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Monolithic integration of Pb(Zr,Ti)O3 thin film based resonators using a complete dry microfabrication process

Yonggang Jiang¹ , Kensuke Kanda^2,3, Yuki Iga², Takayuki Fujita^2,3, Kohei Higuchi², Kazusuke Maenaka^2,3
1 School of Mechanical Engineering and Automation, Beihang University, Xueyuan Road No. 37, Haidian District, Beijing, 100191, China
² Maenaka Human-Sensing Fusion Project, ERATO, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
³ Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
Microsyst Technol (2013) 19:137–142

SAMCO ICP etch system was used for PZT plasma etching to fabricate thin film MEMS resonators.

Miniature Fuel Cell with Monolithically Fabricated Si Electrodes-Reduction of Pt Usage by Pd-Pt Catalyst

Takayuki Honjo, Taku Matsuzaka and Masanori Hayase
Tokyo University of Science, Noda, Chiba, Japan
Presented at Power MEMS 2010, Nov 30-Dec 3, Leuven, Belgium

Samco RIE Etcher was used for silicon plasma etching over Cu mask in fuel channel fabrication of miniature fuel cells.

For more details of our silicon etching technologies, please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process