Photonic Crystal Point-Shift Nanolasers With and Without Nanoslots—Design, Fabrication, Lasing, and Sensing Characteristics

Shota Kita, Kengo Nozaki, Shoji Hachuda, Hideki Watanabe, Yuji Saito, Shota Otsuka, Takeharu Nakada, Yoshiki Arita, and Toshihiko Baba
Department of Electrical and Computer Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
IEEE Journal of Selected Topics in Quantum Electronics, (2011) 17, 6

SAMCO ICP Etch System was used for recipe optimization of InP plasma etching. InP etch profile with a high aspect-ratio was successfully fabricated.

For our process capabilities of InP plasma etching, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)

Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases

Hamad A. Albrithen¹, Gale S. Petrich², Leslie A. Kolodziejski³, Abdelmajid Salhi⁴ and Abdulrahman A. Almuhanna^4
1 Physics and Astronomy, KAIN, King Saud University, Riyadh, Riyadh, Saudi Arabia.
² Research Laboratory of Electronics, MIT, Cambridge, Massachusetts.
³ Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts.
⁴ National Center for Nano Technology Research, King Abdulaziz City for Science and Technology, Riyadh, Riyadh, Saudi Arabia.
MRS Proceedings 2012 1396, mrsf11-1396-o07-33
doi:10.1557/opl.2012.775.

GaSb plasma etching process over SiO₂ mask was investigated using Samco ICP etch system.
Anisotropic GaSb etching with smooth sidewalls were achieved with the recipe optimization.

For more details of our GaSb plasma etching capabilities, please visit the process data page below.
GaSb Plasma Etching

Low-frequency Noise Measurements of AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors with HfAlO Gate Dielectric

C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, . Yang, V. Misra, and P. H. Handel
Microelectronics Materials and Device Laboratory, Virginia Commonwealth University
In: IEEE Electron Device Letters, Vol. 31, No. 9, 5540258, 09.2010, p. 1041-1043.

Mesa isolation of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) was performed using a SAMCO ICP Etch System RIE-101iPH using a Cl based chemistry.

Virginia Commonwealth University is one of Samco’s customers using our process equipment for AlGaN & GaN plasma etching process in device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory.

Samco offers process solutions for AlGaN/GaN power device fabrication using precise AlGaN & GaN plasma etching technologies and SiO₂ PECVD technologies for an passivation layer deposition. For more details on the process solutions, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

J. H. Leach, M. Wu, X. Ni, X. Li, Ü . Ö zgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond VA, 23284, USA
Phys. Status Solidi A, 207: 211–216 (2009).

The field effect transistors were fabricated using Ti/Al/Ni/Au Ohmic contacts followed by etched mesa isolation in a Samco ICP Etch System RIE-101iPH using a Cl-based chemistry.

Virginia Commonwealth University is one of Samco customers using our ICP etch system for AlGaN and GaN plasma etching processes in GaN-based power device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory website

Inductively coupled plasma etching of III–V antimonides in BCl₃/SiCl₄ etch chemistry

K. Swaminathan⁎, P.E. Janardhanan, O.V. Sulima
Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA
Thin Solid Films (2008) 516, Issue 23, 1 October 2008, Pages 8712–8716

Inductively coupled plasma etching process of GaSb was investigated using Samco ICP etch system.
Etch rate of 4 μm/min was achieved over photoresist mask.

For more information on our ICP etch systems, please visit the product page below.
ICP Plasma Etcher

Fabrication of GaInAsP/InP photonic crystal lasers by ICP etching and control of resonant mode in point and line composite defects

Kyoji Inoshita and Toshihiko Baba
Department of Electrical & Computer Engineering, Yokohama National University, Japan
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2003) 9, NO. 5, SEPTEMBER/OCTOBER

Samco ICP plasma etcher was used for InP plasma etching in GaInAsP/InP photonic crystal laser fabrication.

For more details on our InP plasma etching technologies, please visit the process data page below.
InP Plasma Etching