Category: GaSb Etch
Scientific Paper on GaSb Dry Etching Process Development by MIT Team
Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases
Hamad A. Albrithen1, Gale S. Petrich2, Leslie A. Kolodziejski3, Abdelmajid Salhi4 and Abdulrahman A. Almuhanna4
1 Physics and Astronomy, KAIN, King Saud University, Riyadh, Riyadh, Saudi Arabia.
2 Research Laboratory of Electronics, MIT, Cambridge, Massachusetts.
3 Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts.
4 National Center for Nano Technology Research, King Abdulaziz City for Science and Technology, Riyadh, Riyadh, Saudi Arabia.
MRS Proceedings 2012 1396, mrsf11-1396-o07-33
doi:10.1557/opl.2012.775.
GaSb plasma etching process over SiO2 mask was investigated using Samco ICP etch system.
Anisotropic GaSb etching with smooth sidewalls were achieved with the recipe optimization.
For more details of our GaSb plasma etching capabilities, please visit the process data page below.
GaSb Plasma Etching
Scientific Paper on GaSb Dry Etching Process Development by University of Delaware
Inductively coupled plasma etching of III–V antimonides in BCl3/SiCl4 etch chemistry
K. Swaminathan⁎, P.E. Janardhanan, O.V. Sulima
Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA
Thin Solid Films (2008) 516, Issue 23, 1 October 2008, Pages 8712–8716
Inductively coupled plasma etching process of GaSb was investigated using Samco ICP etch system.
Etch rate of 4 μm/min was achieved over photoresist mask.
For more information on our ICP etch systems, please visit the product page below.
ICP Plasma Etcher