Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

N. Okada¹, K. Nojima¹, N. Ishibashi¹, K. Nagatoshi¹, N. Itagaki¹, R. Inomoto¹, S. Motoyama², T. Kobayashi², and K. Tadatomo^1
1Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
²R&D Department, SAMCO Inc., 36 Takeda Waraya-cho, Fushimi-ku, Kyoto 612-8443, Japan

Gallium Nitride (GaN) is a popular nitride material due to its unique material properties such as wide bandgap and high breakdown voltage. The material is commercially used for various applications such as LEDs , RF devices, HEMTs and LDs. In this paper, optimized conditions of GaN plasma etching was investigated in chlorine chemistry. GaN etch profile, etch rate and etch selectivity over SiN hard mask were investigated in several process conditions using Samco ICP-RIE System, RIE-230iPC. For deposition of SiN hard mask layers, Samco PECVD Tool, PD-220NL was used.

This research paper is collaboration between Yamaguchi University and Samco. We have cooperated with Yamaguchi University for process development of GaN etching and PECVD technologies to achieve technical breakthrough in nitride semiconductor based device research.

For more details of our GaN plasma etching technologies and capabilities, please visit the GaN etching process data page below.
GaN Etching using ICP-RIE

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

Shen-Che Huang¹, Heng Li¹ Zhe-Han Zhang¹ Hsiang Chen² Shing-Chung Wang¹ and Tien-Chang Lu^1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan
² Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan
Appl. Phys. Lett. 110, 021108 (2017); doi: 10.1063/1.4973966

Micro-LED devices with oxide-refilled current apertures of different sizes were fabricated on sapphire substrates. Samco ICP-RIE etcher was used for aperture pattern transfer by GaN plasma etching with etching depth control.

Samco has dedicated to academic and industry customers for both research and production of LED devices by providing equipment and process technologies of plasma etching and PECVD. For more details on our process solutions for LED manufacturing, please visit the process solutions page below.
Patterned Sapphire Substrate & GaN Etch for HB LEDs

Also, our latest technical report be found here.
GaN Etching for MiniLED and MicroLED Applications

Improving the Brightness and Reliability of InGaN/GaN Near Ultraviolet Light Emitting Diodes by Controlling the Morphology of the GaN Buffer Layer

S. C. Tsai, H. C. Fang, C. H. Lu and Y. L. Lai
National Cheng Kung University, Tainan, Taiwan
Journal of Display Technology (2016) (Volume:PP , Issue: 99 )

Samco ICP etch system at National Cheng Kung University was used for InGaN/GaN dry etching in UV LED fabrication.
For our process capabilities of GaN dry etching, please visit the process data page below.
GaN Dry Etching Process (RIE or ICP-RIE)

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Ryota Yamanaka¹, Toru Kanazawa¹, Eiji Yagyu² and Yasuyuki Miyamoto¹
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04

SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.

For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)

SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.

For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)

Low-frequency Noise Measurements of AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors with HfAlO Gate Dielectric

C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, . Yang, V. Misra, and P. H. Handel
Microelectronics Materials and Device Laboratory, Virginia Commonwealth University
In: IEEE Electron Device Letters, Vol. 31, No. 9, 5540258, 09.2010, p. 1041-1043.

Mesa isolation of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) was performed using a SAMCO ICP Etch System RIE-101iPH using a Cl based chemistry.

Virginia Commonwealth University is one of Samco’s customers using our process equipment for AlGaN & GaN plasma etching process in device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory.

Samco offers process solutions for AlGaN/GaN power device fabrication using precise AlGaN & GaN plasma etching technologies and SiO₂ PECVD technologies for an passivation layer deposition. For more details on the process solutions, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

J. H. Leach, M. Wu, X. Ni, X. Li, Ü . Ö zgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond VA, 23284, USA
Phys. Status Solidi A, 207: 211–216 (2009).

The field effect transistors were fabricated using Ti/Al/Ni/Au Ohmic contacts followed by etched mesa isolation in a Samco ICP Etch System RIE-101iPH using a Cl-based chemistry.

Virginia Commonwealth University is one of Samco customers using our ICP etch system for AlGaN and GaN plasma etching processes in GaN-based power device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory website