Deposition of TiO₂/Al₂O₃ bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

J. W. Liu¹, M. Y. Liao¹, M. Imura¹, R. G. Banal¹, and Y. Koide^2
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
² Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
JOURNAL OF APPLIED PHYSICS 121, 224502 (2017)

Diamond-based power devices are expected to see emerging applications which require high breakdown voltage. In this paper, MOSFET, MOS capactors and MOS logic inverter were fabricated using hydro-generated diamond.
Plasma etching of H-diamond channel layer was performed using Samco RIE etcher, RIE-200NL. Samco offers several plasma etching systems for customers who actively working on diamond power device research. For more details of plasma etching systems for diamond etching, please visit the product pages below.

RIE Plasma Etcher
ICP Etcher

Design and fabrication of high-performance diamond triple-gate field-effect transistors

Jiangwei Liu ¹, Hirotaka Ohsato ², Xi Wang ¹, Meiyong Liao ³ & Yasuo Koide ^4
1 International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
² Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
³ Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
⁴ Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Scientific Reports 6, Article number: 34757 (2016)

Diamond is considered to be a material for next-generation power semiconductor devices due to high thermal conductivity and breakdown voltage. In this research, triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device was fabricated using a hydrogenated diamond (H-diamond) substrate. In device fabrication, Samco open-load Reactive Ion Etching (RIE) system at National Institute for Materials Science (NIMS) was used for diamond plasma etching to form a diamond mesa structure.

For our process capabilities of diamond plasma etching, please visit the process data page below.
Diamond Plasma Etching Process Data (RIE Etching & ICP Etching)
Also, for more information on process equipment which are suitable for diamond plasma etching, please visit the product page below,
Reactive Ion Etching (RIE) Systems
ICP Etching Systems

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Qingpeng Wang^1,2, Ying Jiang^1,2, Jiaqi Zhang^1,2, Kazuya Kawaharada¹, Liuan Li¹, Dejun Wang² and Jin-Ping Ao^1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
² School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003

Samco PECVD system was used for gate oxide (SiO₂) formation in GaN MOSFET fabrication.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/

Also, SiO₂ PECVD process data can be found in the page below.
SiO₂ PECVD Process

A CMOS-Compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs

Lin, J., D. A. Antoniadis, and J. A. del Alamo
presented at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 239-242.

Samco ICP etching system, RIE-200iP was used for optimization of InGaAs/InAlAs/InP dry etching process.

Go to Prof. Jesús A. del Alamo Research Group Website

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Ryota Yamanaka¹, Toru Kanazawa¹, Eiji Yagyu² and Yasuyuki Miyamoto¹
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04

SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.

For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Nanofabrication of air-spaced field-plate gates with ultra-short footprint

Jinhai Shao^a, Jianpeng Liu^a, Junjie Li^a, Sichao Zhang^a, Bing-Rui Lu^a, W. Lu^b and Yifang Chen^a
a State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
^b Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Microelectronic Engineering (2014) 143, 1, 11-14

Samco RIE System at Fudan University was used for SiNx plasma etching to fabricate short foot-print field-plate gates for GaN based high electron mobility transistors (HEMTs).

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Qingpeng Wang^{a, b}, Ying ^{, b}, Takahiro Miyashita^c, Shin-ichi Motoyama^c, Liuan Li^b, Dejun Wang^a, Yasuo Ohno^b and Jin-Ping Ao^b
a School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, China
^b Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
^c Research and Development Department, SAMCO Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
Solid-State Electronics (2014) 99, Pages 59–64

Samco PECVD system was used for SiO2 insulation film deposition.
This paper is collaboration work of Dalian University of Technology, The University of Tokushima and Samco.

For more details of our SiO₂ PECVD technologies, please visit the page below.
SiO₂ PECVD Process

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y Jiang^1,2, Q P Wang^1,2, K Tamai², L A Li², S Shinkai³, T Miyashita⁴, S-I Motoyama⁴, D J Wang^1,5, J-P Ao^2,5 and Y Ohno^2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
² Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
³ Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
⁴ Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
⁵ Author to whom any correspondence should be addressed.
⁶ Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002

Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)

SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.

For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl₃ surface plasma treatment

Tatsuya Fujishima¹, Sameer Joglekar¹, Daniel Piedra¹, Hyung-Seok Lee¹, Yuhao Zhang¹, Akira Uedono² and Tomás Palacios^1
1 Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA
² Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Appl. Phys. Lett. 103, 083508 (2013)

Surface treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors was developed using Samco ICP etch system.

For more details of our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication