Multiplexed immunosensing and kinetics monitoring in nanofluidic devices with highly enhanced target capture efficiency

Yii-Lih Lin^1,2,3, Yen-Jun Huang^3,4, Pattamon Teerapanich^5,6, Thierry Leïchlé^5,6 and Chia-Fu Chou^2,3
1 Department of Chemistry, National Taiwan University, Taipei, Taiwan
² Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica and National Taiwan University, Taipei, Taiwan
³ Institute of Physics, Academia Sinica, Taipei, Taiwan
⁴ Department of Physics, National Taiwan University, Taipei, Taiwan
⁵ LAAS-CNRS, 7 Avenue du Colonel Roche, F-31077 Toulouse, France
⁶ Université de Toulouse, F-31077 Toulouse, France
Biomicrofluidics 10, 034114 (2016)

Samco ICP etch system, RIE-10iP was used for nano-slit pattern fabrication by fused quartz plasma etching.

For our process capabilities of SiO₂ and quartz plasma etching, please visit the process data page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Samco, a semiconductor process equipment developer and manufacturer based in Japan, announced that it will open its Malaysia branch office on Aug. 10, 2016 in Petaling Jaya, a suburb of Kuala Lumpur.

“With our new office conveniently located near Kuala Lumpur, we expect to better serve Malaysia’s research universities and manufacturers,” says Osamu Tsuji, Samco’s chairman, president and CEO.  “Four company representatives will be assigned to this new location, where they will actively provide production-type systems and services, consisting of the three major technologies Samco specializes in.”

Methods of creating and observing atomically reconstructed vertical Si{100}, {110}, and {111} side-surfaces

Azusa N. Hattori^1,2, Shohei Takemoto³, Ken Hattori³, Hiroshi Daimon¹ and Hidekazu Tanaka^1
1 Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
² JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan
³ Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan
Appl. Phys. Express (2016) 9 085501

Samco silicon Deep Reactive Ion Etch (DRIE) system at Osaka University was used for silicon nano-scale structure fabrication.

For our process examples and capabilities of deep silicon etching using Bosch Process, please visit the pages below.
Deep Silicon Trench/Via Hole Etching using Bosch Process
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV

Samco joins SEMICON WEST 2016.

Date : July 12 – 16, 2016
Location : Moscone Center, San Francisco, CA, USA
Booth : 1709

Highlights:
· Process solutions for SiC and GaN power device fabrication
· Plasma dicing/scribing solutions for compound semiconductors (GaAs, InP and GaN)
· Small-footprint plasma cleaning systems equipped with three plasma modes (RIE mode, plasma etch mode and dowstream mode) for various R&D projects
· Silicon DRIE process solutions for MEMS device fabrication and TSV
We have strengthened process technologies of deep silicon etching and expanded product portfolio of single-chamber system and double-chamber system for production.

Feel free to visit our booth for discussion about your interest in material processing.

Request Meeting with SAMCO >

Samco, a Japan-based semiconductor processing equipment manufacturer, held a completion ceremony for its second production center on June 17.  The new production center, which began construction in January and is expected to begin operations during the fall of this year, boosts Samco’s original shipment capacity of 6-7 billion yen per year to a total of 10-11 billion yen per year.

SAMCO has a booth at OPTO Taiwan.

Date : June 15 – 17, 2016
Location : TWTC, Nangang Exhibition Hall, Taipei, Taiwan
Booth : M110

Samco joins this tradeshow every year for extensive communication with customers who are looking for advanced processing technology of optoelectronics manufacturing. This year we will focus on ICP dry etching and PECVD technologies for laser diode production. Let us know if you are interested in meeting and discussion with us.

Request Meeting with SAMCO >

SAMCO joins 2016 UGIM Symposium at Salt Lake City.

Date : June 12 – 15, 2016
Location : The University of Utah, Salt Lake City, UT, USA
Booth : Table 11

We will show our technologies (deposition, etching and surface treatment) and systems for device fabrication. Feel free to visit us for discussion with us about your interest in material processing.

Request Meeting with SAMCO >

Sub-5 nm nanostructures fabricated by atomic layer deposition using a carbon nanotube template

Ju Yeon Woo¹, Hyo Han¹, Ji Weon Kim1, Seung-Mo Lee², Jeong Sook Ha³, Joon Hyung Shim¹ and Chang-Soo Han^1
1 School of Mechanical Engineering, Korea University Anam-Dong, Seongbuk-Gu, Seoul 136-713, Korea
² Department of Nanomechanics, Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials (KIMM), 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343, Korea
³ Department of Chemical & Biological Engineering, Korea University Anam-Dong, Seongbuk-Gu, Seoul 136-713, Korea
Nanotechnology (2016) 27 265301 (7pp)

Samco RIE system was used for removal of single-walled carbon nanotubes (CNT) in an oxygen plasma.

SAMCO has a booth at CS ManTech 2016 at Miami, FL.

Date : May 16 – 19, 2016
Location : Hyatt Regency Miami, Miami, FL, USA
Booth : #318

This year, our booth will feature topics of SiC power devices, GaN power devices and plasma dicing of III-V materials (InP, GaAs and GaN-on-Si).
If you are interested in meeting with us, please let us know your process demands.

Request Meeting with SAMCO >

Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

Akihiro Matsutani¹, Fumitaka Ishiwari², Yoshiaki Shoji², Takashi Kajitani², Takuya Uehara³, Masaru Nakagawa³, and Takanori Fukushima^2
1 Division of Microprocessing Technology Platform, Technical Department, Tokyo Institute of Technology, Yokohama 226-8503, Japan
² Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan
³ IMRAM, Tohoku University, Sendai 980-8577, Japan
Japanese Journal of Applied Physics (2016) Volume 55, Number 6S1

Samco ICP etch system was used for GaAs plasma etching over tripodal paraffinic triptycene (TripC₁₂) mask.
Based on chlorine gas plasma chemistry, vertical and smooth GaAs profile was achieved.

For our process capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)