Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

M. Cihan Çakır^1,2 ,Deniz Çalışkan¹, Bayram Bütün¹ and Ekmel Özbay^1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
² Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
³ Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey

Samco PECVD system at Bilkent University was used for Si₃N₄ film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si₃N₄ against Si etch mask for ITO gas sensor fabrication.

For more information on our Si₃N₄ PECVD process capabilities, please visit the process data page below.
Si₃N₄ PECVD Process Data

For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO₂, Si₃N₄, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO₂ and Si₃N₄ Film Deposition
ICP-RIE Plasma Etcher for Si, SiO₂, III-V & Metal Etching

When: November 8 – 9
Where: Fort Worth Convention Center in Fort Worth, Texas, USA
Booth: 216

Come see us at the International Symposium for Testing and Failure Analysis 2016 exhibition which will be held at the Fort Worth Convention Center in Fort Worth, Texas, USA

Samco has a complete suite of products for failure analysis applications that include surface treatment, cleaning, dry etching and deposition systems. Stop by at our booth to discuss with us about your requirements and to find out about the best solutions for your failure analysis application requirements.

ISTFA Website

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SAMCO is presenting a paper at AVS 63rd International Symposium, titled “Deep GaAs Etching with V-shaped Trench Profile Using Inductively Coupled Plasma Technology“.

Tensile fracture of integrated single-crystal silicon nanowire using MEMS electrostatic testing device

Toshiyuki Tsuchiya , Tetsuya Hemmi, Jun-ya Suzuki, Yoshikazu Hirai, Osamu Tabata
Department of Micro Engineerng, Kyoto University, Kyotodaigaku-Katsura C3, Nishikyo-ku, Kyoto 615-8540, Japan
Procedia Structural Integrity (2016) 2 Pages 1405–1412

Samco silicon Deep RIE system at Kyoto University was used for silicon nanowire fabrication by combination of two types of silicon etch processes (the Bosch Process) with coarse and fine scallops. Using the unique silicon plasma etching processes, silicon nanowire structures were successfully fabricated on a SOI wafer.

Kyoto University is one of Samco Deep RIE system customers for MEMS device research.
For more details of our silicon Deep RIE process technologies, please visit the process data pages below.
Silicon Deep RIE for MEMS & TSV Applications
Deep Silicon Etching Using the Bosch Process – Trench, Via Hole & Pillar Etching

Also, For more information of our silicon Deep RIE systems, please visit the product page below.
Silicon Deep RIE Systems

When: September 7-9
Where: TWTC Nangang Exhibition Hall in Taipei, Taiwan
Booth: 229

Come see us at SEMICON Taiwan, Taiwan’s largest microelectronics exhibition, which will be held at the TWTC Nangang Exhibition Hall in Taipei.

Samco’s systems, which have an extensive track record throughout Taiwan, are highly regarded by researchers and manufacturers for their proven reliability and cost-effective solutions.  As we aim to expand further into the Taiwanese market, our booth will focus on the rapidly-growing semiconductor laser market, as well as showcase the latest data for ICP dry etching , plasma CVD and more.

SEMICON Taiwan 2016 Website

Mesoporous silica layer on plasmonic array: light trapping in a layer with a variable index of refraction

Shunsuke Murai^{1, 2}, Hiroyuki Sakamoto¹, Koji Fujita¹, and Katsuhisa Tanaka^1
1 Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto, 615-8510, Japan
² PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
Optical Materials Express Vol. 6, Issue 9, pp. 2736-2744 (2016) doi: 10.1364/OME.6.002736

Plasmonic array was fabricated using nanoimprint technology. First, silicon mold consisting of a periodic square array was fabricated using silicon deep etching. Samco silicon DRIE system at Kyoto University was used for the mold fabrication. Then, Samco ICP etch system was used for pattern transfer by aluminum dry etching over photoresist pattern fabricated by the nanoimprint process.

Wettability control on multiphase flow in patterned microfluidics

Benzhong Zhao^a, Christopher W. MacMinn^b, and Ruben Juanes^a
a Department of Civil and Environmental Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139;
^b Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, United Kingdom
PNAS (2016) DOI10.1073/pnas.1603387113

Fluid–fluid displacement in porous media of microfluidic flow cell was studied for potential CO₂ sequestration application to solve global warming caused by the greenhouse gas.
Samco tabletop UV-ozone cleaner at MIT was used for wettability improvement of photocurable polymer NOA81 to fabricate microfluidic flow cells.

This article was featured in MIT News.
View the news article.

Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes

Sheng-Chieh Tsai^{a, b}, Cheng-Hsueh Lu^b and Chuan-Pu Liu^a
a Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
^b Research Center, Genesis Photonics Incorporation, Tainan 74144, Taiwan
Nano Energy (2016)

Samco ICP etch system was used for InGaN plasma etching in quantum well structure fabrication.

Samco has plasma etching process knowledge of III-V compound semiconductor materials including GaN, GaAs, InP and more. Please visit our process data page for more details of our process capabilities.

Process Data by Materials

Integrated solid-state nanopore platform for nanopore fabrication via dielectric breakdown, DNAspeed deceleration and noise reduction

Yusuke Goto, Itaru Yanagi, Kazuma Matsui, Takahide Yokoi & Ken-ichi Takeda
Center for Technology Innovation – Healthcare, Research & Development Group, Hitachi Ltd.,1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan.
Scientific Reports 6, Article number: 31324 (2016) doi:10.1038/srep31324

Samco plasma cleaner was used for surface cleaning and wettability modulation of substrates with Si₃N₄ membranes in sample preparation.

Phase-modulating lasers toward on-chip integration

Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yu Takiguchi & Yoshiro Nomoto
Central Research Laboratory, Hamamatsu Photonics K.K., Shizuoka 434-8601, Japan.
Scientific Reports 6, Article number: 30138 (2016)
doi:10.1038/srep30138

Samco Load-lock ICP-RIE System was used for GaAs-based hole array fabrication in dry etching for phase-modulating laser fabrication.

For our process examples and capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Plasma Etching Process (ICP-RIE)