We would like to extend our condolences to the families of those killed by the earthquake and our deepest sympathy to all who were affected by the earthquake. SAMCO employees from of all over the world donated 10.05 million JPY to the Japan Red Cross. We will do our utmost to support our customers in the course of their recovery from the earthquake.

Our corporate headquarters and manufacturing facility are located in Kyoto, in the Kansai region of Japan, approximately 690 km (340 miles) southwest of the recent earthquake’s epicenter in the Miyagi, Tohoku region.

Miniature Fuel Cell with Monolithically Fabricated Si Electrodes-Reduction of Pt Usage by Pd-Pt Catalyst

Takayuki Honjo, Taku Matsuzaka and Masanori Hayase
Tokyo University of Science, Noda, Chiba, Japan
Presented at Power MEMS 2010, Nov 30-Dec 3, Leuven, Belgium

Samco RIE Etcher was used for silicon plasma etching over Cu mask in fuel channel fabrication of miniature fuel cells.

For more details of our silicon etching technologies, please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process

SAMCO presented a paper at the AVS 57th International Symposium and Exhibition titled “Hardness and Roughness of SiCN Thin Films Deposited at 500°C by RFPECVD.”

SAMCO has recently established new sales and support offices in the United States, China and Taiwan to increase global sales and support of its semiconductor process equipment. This is in response to the growing demand for production of green technologies such as LEDs and Power Devices.

Low-frequency Noise Measurements of AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors with HfAlO Gate Dielectric

C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, . Yang, V. Misra, and P. H. Handel
Microelectronics Materials and Device Laboratory, Virginia Commonwealth University
In: IEEE Electron Device Letters, Vol. 31, No. 9, 5540258, 09.2010, p. 1041-1043.

Mesa isolation of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) was performed using a SAMCO ICP Etch System RIE-101iPH using a Cl based chemistry.

Virginia Commonwealth University is one of Samco’s customers using our process equipment for AlGaN & GaN plasma etching process in device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory.

Samco offers process solutions for AlGaN/GaN power device fabrication using precise AlGaN & GaN plasma etching technologies and SiO₂ PECVD technologies for an passivation layer deposition. For more details on the process solutions, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

SAMCO, Inc. is actively developing and expanding its global market. As a result of this effort, we have recently sold CVD and dry etching systems in South America and Oceania, and are recording rapidly increasing sales of our mass production systems in Asia.

May 4, 2010 – Mr. Osamu Tsuji, CEO of SAMCO, was invited to a seminar hosted by Taiwan Photonics Industry & Technology Development Association in Taipei, Taiwan, where he spoke on the latest technologies and market trends.

May 4, 2010 – Mr. Osamu Tsuji, CEO of SAMCO, was invited to a seminar hosted by Taiwan Photonics Industry & Technology Development Association in Taipei, Taiwan, where he spoke on the latest technologies and market trends.

March 17, 2010 – Although the LED industry endured a great downturn in the wake of the Lehman shock, capital investments by LED manufacturers in Taiwan are recovering, thanks to the growing demand for LEDs in China and South Korea. In particular, capital investments for LCD TV backlights are leading the market recovery process.