Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)

SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.

For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)

Multi-channel PMMA microfluidic biosensor with integrated IDUAs for electrochemical detection

Nongnoot Wongkaew^a,b, Peng He^b, Vanessa Kurth^b, Werasak Surareungchai^a, and Antje J. Baeumner^b
aSchool of Bioresources and Technology, King Mongkut’s University of Technology Thonburi, Bangkhuntien, Bangkok 10150,Thailand ^bDepartment of Biological and Environmental Engineering, Cornell University, 202 Riley Robb Hall, Ithaca, NY 14853, USA
Anal Bioanal Chem. 2013 July ; 405(18): 5965–5974. doi:10.1007/s00216-013-7020-0.

Samco UV-Ozone Cleaner at Cornell University was used for oxidation of PMMA to generate carboxylic groups on the surface in microfluidic biosensor fabrication. Samco UV-Ozone cleaners are used for many R&D labs of polymer biosensor fabrication for bonding of polymer materials, such as PDMS, PMMA , COP & COC.

Structural Optimization of Metallic Infrared Filters Based on Extraordinary Optical Transmission

Makoto Ohkado¹, Tsuyoshi Nomura¹, Atushi Miura¹, Hisayoshi Fujikawa¹, Naoki Ikeda², Yoshimasa Sugimoto² and Shinji Nishiwaki^3
1Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan
²National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
³Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501, Japan
Transactions of the Materials Research Society of Japan (2013) 38, No. 2 p. 167-170

SiO₂ plasma etching and Al plasma etching were performed using Samco RIE system and ICP etch system, respectively to fabricate hole array structures of the infrared filter.

For more details of our SiO₂ dry etching capabilities, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Tokyo, Japan July 24, 2013 – SAMCO Inc. (Located at 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto – Second Section of the TSE: 6387) announced today that SAMCO’s stock listing was transferred from TSE JASDAQ (Standard) to the Second Section of the Tokyo Stock Exchange market (TSE). SAMCO is the first transfer of its listing since the consolidation of the Tokyo Stock Exchange (TSE) and the Osaka Securities Exchange (OSE) on July 16, 2013.

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

Mariana C. Prado¹, Deep Jariwala², Tobin J. Marks^2,3 and Mark C. Hersam^2,3
1 Departamento de Física, Universidade Federal de Minas Gerais, Av. Antônio Carlos, 6627, 31270-901 Belo Horizonte, Brazil
² Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
³ Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
Appl. Phys. Lett. (2013) 102, 193111

Samco RIE System at Northwestern University was used for investigation of reactive ion etching process of graphene.

Samco RIE systems are versatile tools for plasma etching of various materials including Si, SiO₂, SiN_x, metal, polymer and carbon-based materials.
For more information on our RIE system, please visit the product page below.
RIE Etching Systems

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl₃ surface plasma treatment

Tatsuya Fujishima¹, Sameer Joglekar¹, Daniel Piedra¹, Hyung-Seok Lee¹, Yuhao Zhang¹, Akira Uedono² and Tomás Palacios^1
1 Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA
² Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Appl. Phys. Lett. 103, 083508 (2013)

Surface treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors was developed using Samco ICP etch system.

For more details of our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

A transfer technique of stress sensors for versatile applications

C. Dou, H. Yang, Y. Wu and X. Li
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on, Suzhou, 2013, pp. 931-934.
doi: 10.1109/NEMS.2013.6559876

Samco open-load RIE etch system was used for SiO₂ layer removal in device fabrication.

For more details of our SiO₂ plasma etching capabilities, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

The RIE-600iP – SAMCO’s latest ICP etching solution designed specifically for SiC power devices fabrication – was recently honored with the “Semiconductor of the Year” award given by The Semiconductor Industry News. On June 5th, the award was presented at a ceremony at the JPCA Show 2013 (hosted by Tokyo Big Sight).

On April 15^th 2013, SAMCO Inc (head quartered in Kyoto, Japan expanded its OPTO Films Research Laboratory in California’s Silicon Valley in order to strengthen its research structure and after-sale process support.

In accordance with the “Basic Guidelines for Reconstruction in Response to the Great East Japan Earthquake” (determined on July 29, 2011) and the “Basic Policy for Recovery and Reconstruction of Fukushima” (passed on July 13, 2012), the FUTURE-PV (Fukushima Top-Level United Center for Renewable Energy Research-Photo Voltaic Innovation) Research Facility has been established in Fukushima Prefecture as a 5-year project from 2012 to 2016. The research at this facility will be supervised by Professor Makoto Konagai of the Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology.