High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

M. Wienold, B. Röben, L. Schrottke, R. Sharma, A. Tahraoui, K. Biermann and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
Opt Express. (2014) 22 (3):3334-48
SAMCO ICP Etch System is used for fabrication of GaAs/AlGaAs terahertz quantum-cascade lasers (THz QCLs).

For more details of our GaAs dry etch capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

SAMCO’s stock had been transferred from the Second Section to the First Section of Tokyo Stock Exchange market.

High-aspect-ratio nanoimprinted structures for a multi-pole magnetic scale

Zhi-Hao Xu¹, Chien-Li¹, Cheng-Kuo¹, Sheng-Ching³ and Tsung-Shune Chin^2
1 Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, TAIWAN
² Department of Materials Science & Engineering, Feng Chia University, Taichung 40724, TAIWAN
³ Department of Mechanical Engineering, National United University, Miaoli 36003, TAIWAN
Microsystem Technologies (2014) 20, 10, pp 1949-1953

SAMCO Plasma Cleaner was used for photoresist stripping/trimming in high-aspect-ratio structure.

For more details of our photoresist stripping & removal process solutions, please visit the page below.
Plasma Ashing & Stripping of Photoresist

Metal-Containing Block Copolymer Thin Films Yield Wire Grid Polarizers with High Aspect Ratio

So Youn Kim ¹, Jessica Gwyther ², Ian Manners ², Paul M. Chaikin ³, and Richard A. Register ¹
1 Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, USA
2 School of Chemistry, University of Bristol, Bristol, United Kingdom
3 Department of Physics, New York University, New York, USA
Adv. Mater., 26, 791-795 (2014)

Samco Silicon DRIE System at Princeton University was used for deep silicon etching using the Bosch Process.

For more details of our deep silicon etching capabilities, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Silicon Deep Etching Using the Bosch Process

SAMCO is proud to announce the release of our newest deep silicon etching system — the RIE-800iPBC — for MEMS and TSV production processing. The RIE-800iPBC is the latest in SAMCO’s etching system lineup, and was officially introduced by SAMCO at SEMICON Japan 2013 (the world’s largest exhibition for semiconductor equipment and materials), held in Tokyo from December 4-6, 2013.

Enhancement of electrical conductivity and electrochemical activity of hydrogenated amorphous carbon by incorporating boron atoms

Hiroshi Naragino, Kohsuke Yoshinaga, Akira Nakahara, Sakuya Tanaka and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida, Yamaguchi-shi, Yamaguchi 753-8512, Japan
Journal of Physics: Conference Series, 441, 2013 conference 1
Process and film properties of conductive boron-doped hydrogenated amorphous carbon (B-DLC) thin films was studied in this research. Samco PECVD system at Yamaguchi University was used for DLC film deposition.

Samco offers PECVD systems and process technology for deposition of various types of films such as SiO₂, SiN_x, TiO₂, amorphous carbon (a-Si), SiON, SiCN and DLC.
For more details of our system lineup, please visit the product pages below.
Anode PECVD Systems for High-quality Film Deposition
Cathode PECVD Systems for High-speed SiO₂ and SiN_x Film Deposition under 80 °C

SAMCO is presenting a paper at AVS 60th International Symposium and Exhibit, titled “Development of ICP Etching Processes for Gallium Nitride HEMT.”

Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency

Kohsuke Yoshinaga, Hiroshi Naragino, Akira Nakahara and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida,
Yamaguchi-shi, Yamaguchi, 753-8512, Japan
Journal of Physics: Conference Series (2013) 441, conference 1

SAMCO PECVD System was used for deposition of Nitrogen-doped amorphous silicon carbide films (N-doped a-SiC) to investigate the film properties.

SAMCO released a new cassette-to-cassette production etch system, the model RIE-600iPC, for Silicon Carbide (SiC) processing. The main system applications are planar processing for SiC power devices, fine trench etching for SiC MOS structures, SiC through-wafer etching for via hole formation, and SiO2 mask etching.

Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

Kaiyu Cui, Yongzhuo Li, Xue Feng, Yidong Huang and Wei Zhang
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
AIP ADVANCES (2013) 3, 022122

InP photonic crystal waveguide was fabricated using SAMCO ICP Etch System.

For more details of our InP dry etching process capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)