Effects of epitaxial growth on the optimum condition of intrinsic amorphous silicon oxide buffer layers for silicon heterojunction solar cells

He Zhang^a, Kazuyoshi Nakada^b, Makoto Konagai^{a, c
a} MEXT/FUTURE-PV Innovation Research, Japan Science and Technology Agency (JST), 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0298, Japan
^b Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-NE-15 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
^c Advanced Research Laboratories, Tokyo City University, 8-15-1, Todoroki, Setagaya-ku, Tokyo 158-0082, Japan

Thin Solid Films (2017) 628 pp 214–220

Samco PECVD tool PD-2203L was used for deposition of amorphous silicon oxide buffer layer for silicon solar cell application. Excellent film properties of surface passivation were achieved. For more details of our PECVD lineup and capabilities, please visit the product pages below.

Anode PECVD Systems for High Quality Film Deposition of SiO₂, SiN_x and aSi
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