Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

J. D. McNamara ¹, K. L. Phumisithikul ¹, A. A. Baski1, J. Marini ², F. Shahedipour-Sandvik ², S. Das ³ and M. A. Reshchikov ^1
1 Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA
² Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USA
³ Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA
J. Appl. Phys. 120, 155304 (2016)

Nanometer-scale plasma etching of Mg-doped, p-type Al_xGa_1−xN was performed to remove defective surface region, using Samco ICP-RIE etch system at Virginia Commonwealth University. With plasma etching process with chlorine chemistry, surface defects were successfully removed.

Virginia Commonwealth University is one of Samco’s proprietary customers using our systems for AlGaN & GaN plasma etching in AlGaN/GaN device research.
For more details of our plasma etching technologies of GaN, please visit the process data page below.
GaN Plasma Etching Process Data
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ICP-RIE Etch Systems