Scientific Paper on Fluorescence Detection Device Fabrication Using a-Si PECVD Process by AIST, Japan
Heterogeneously integrated laser-induced fluorescence detection devices: Integration of an excitation source
Toshihiro Kamei, Keiko Sumitomo, Sachiko Ito, Ryo Takigawa, Noriyuki Tsujimura, Hisayuki Kato, Takeshi Kobayashi and Ryutaro Maeda
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
Japanese Journal of Applied Physics (2014) 53, 06JL02
P-doped, undoped and B-doped a-Si:H film deposition were performed using SAMCO PECVD System for microfluidic device fabrication.