Scientific Paper on GaSb Dry Etching Process Development by University of Delaware
Inductively coupled plasma etching of III–V antimonides in BCl3/SiCl4 etch chemistry
K. Swaminathan⁎, P.E. Janardhanan, O.V. Sulima
Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA
Thin Solid Films (2008) 516, Issue 23, 1 October 2008, Pages 8712–8716
Inductively coupled plasma etching process of GaSb was investigated using Samco ICP etch system.
Etch rate of 4 μm/min was achieved over photoresist mask.
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ICP Plasma Etcher
