Samco Strengthens Collaboration with IIT Delhi, Advancing Japan-India Technology and Talent Exchange
Samco Inc. (TSE: 6387) has announced plans to strengthen its collaboration with the Indian Institute of Technology Delhi (IIT Delhi)…
We are Samco Inc.
Established in 1979, Samco began as a garage start-up in Kyoto, aiming to provide cutting-edge semiconductor device and electronic component manufacturing systems globally. Over time, we have evolved into a leading global corporation with state-of-the-art technological capabilities and a widespread international presence. Our commitment to growth prioritizes “thin-film technology” as our core expertise.
Date
May 27, 2025
–
May 30, 2025
Location
Banff Centre for Arts and Creativity | Canada
Introduction of the Single-Wafer Aqua Plasma® System
Introduction Since its founding, our company has been developing and designing equipment with superior environmental, health, and safety (EHS) features.…
Cornell University EMBA Students Visit Samco Inc. to Explore Innovation and Semiconductor Leadership in Japan
Kyoto, Japan – April 4, 2025 – Samco Inc. (TSE: 6387), was pleased to welcome a delegation of Executive MBA…
MIT’s Dr. Tomás Palacios Visits Samco to Explore Future Microelectronics Innovations
Samco Inc. (TSE: 6387), was honored to host Dr. Tomás Palacios, Director of the Microsystems Technology Laboratories at MIT and…
Introduction to the 700°C High-Temperature PECVD System PD-101TC
Introduction Plasma-enhanced chemical vapor deposition (PECVD) systems were initially developed for low-temperature film deposition. However, recent diversification in research and…
What is Atomic Layer Deposition (ALD)?
Atomic Layer Deposition Tutorial: Introduction to ALD Atomic Layer Deposition (ALD) is a thin-film deposition technique that utilizes self-limiting surface…
Northwestern University – NUFAB: Nasir Basit, PhD.
Micro- and nanoscale device research, deposition and etching processes using RIE and PECVD for advanced structures.
ICP Etching Process for Realizing SiC Trench MOSFETs
Introduction One example of a 4H-SiC power device is the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). While planar MOSFETs…
National Institute of Advanced Industrial Science and Technology (AIST): Takahiro Mori Ph.D.
Research on silicon spin qubits for quantum computing, using PD-2201LC, RIE-400iPC, and RIE-230LC.
Featured Solutions
Gallium Nitride (GaN) Etching
GaN is a III-V compound semiconductor material which has wide band gap and high electron mobility. Applications include Vertical Power Devices, HB LEDs, and more.
Indium Phosphide (InP) Etching
InP is a compound semiconductor material of III-V group. This material has a wide band gap and a high electron mobility.
Gallium Arsenide (GaAs) Etching
GaAs is a III–V compound direct-gap semiconductor used for applications including optoelectronics and radio-frequency (RF) devices.
Atomic Layer Etching (ALE)
ALE enables atomic-scale precision for controlled material removal, ensuring uniformity and selectivity in advanced semiconductor fabrication.
SiO2 deposition
SiO2 properties include excellent abrasion resistance, good electrical insulation, low thermal expansion and high thermal stability, making it ideal for a wide range of applications.
SiNx deposition
SiNx properties include low moisture and oxygen permeation, good electrical insulation and low thermal expansion. This material is used in a variety of applications in device fabrication.
Silicon Deep Reactive Ion Etching (DRIE)
The Bosch Process enables deep silicon etching process solutions with high aspect ratio etching and excellent selectivity, ideal for MEMS and packaging applications.
Atomic Layer Deposition (ALD)
ALD delivers uniform, pinhole-free films with precise thickness control, making it ideal for high-aspect-ratio and complex device structures.
We deliver cutting-edge process equipment designed for precise film deposition, high-performance etching, and efficient surface cleaning. Our solutions cater to both R&D and production needs across diverse applications, including compound semiconductors, quantum computing, optoelectronics, MEMS, microfluidics, power devices, RF devices, and more.
